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Aziz, M., Mari, R. H., Felix, J. F., Mesli, A., Taylor, D., Lemine, M. O., Henini, M., Pillai, R., Starikov, D., Boney, C., Bensaoula, A. (2013) Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE. physica status solidi (c), 10 (1). 101-104 doi:10.1002/pssc.201200409

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Reference TypeJournal (article/letter/editorial)
TitleDeep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE
Journalphysica status solidi (c)
AuthorsAziz, M.Author
Mari, R. H.Author
Felix, J. F.Author
Mesli, A.Author
Taylor, D.Author
Lemine, M. O.Author
Henini, M.Author
Pillai, R.Author
Starikov, D.Author
Boney, C.Author
Bensaoula, A.Author
Year2013 (January)Volume10
Issue1
PublisherWiley
DOIdoi:10.1002/pssc.201200409Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5123345Long-form Identifiermindat:1:5:5123345:5
GUID0
Full ReferenceAziz, M., Mari, R. H., Felix, J. F., Mesli, A., Taylor, D., Lemine, M. O., Henini, M., Pillai, R., Starikov, D., Boney, C., Bensaoula, A. (2013) Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE. physica status solidi (c), 10 (1). 101-104 doi:10.1002/pssc.201200409
Plain TextAziz, M., Mari, R. H., Felix, J. F., Mesli, A., Taylor, D., Lemine, M. O., Henini, M., Pillai, R., Starikov, D., Boney, C., Bensaoula, A. (2013) Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE. physica status solidi (c), 10 (1). 101-104 doi:10.1002/pssc.201200409
In(2013, January) physica status solidi (c) Vol. 10 (1) Wiley

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Mari, Riaz H., Aziz, M., Shafi, M., Khatab, A., Taylor, D., Henini, M. (2012) Effect of epitaxial layer thickness on the deep level defects in MBE grown n-type Al0.33Ga0.67As. physica status solidi (c), 9 (7). 1643-1646 doi:10.1002/pssc.201100676
Boney, C., Hernandez, I., Pillai, R., Starikov, D., Bensaoula, A., Henini, M., Syperek, M., Misiewicz, J., Kudrawiec, R. (2011) Growth and characterization of InGaN for photovoltaic devices. physica status solidi (c), 8 (7). 2460-2462 doi:10.1002/pssc.201000993
Misra, P., Boney, C., Pillai, R., Starikov, D., Bensaoula, A. (2008) M-plane III-nitride materials for polarization sensitive devices grown by PAMBE with real time analysis by spectroscopic ellipsometry. physica status solidi (c), 5 (6). 2286-2289 doi:10.1002/pssc.200778702
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Shafi, M., Mari, R.H., Henini, M., Taylor, D., Hopkinson, M. (2009) Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy. physica status solidi (c), 6 (12). 2652-2654 doi:10.1002/pssc.200982561
Nyamhere, C., Das, M., Auret, F. D., Chawanda, A. (2008) A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS). physica status solidi (c), 5 (2). 623-625 doi:10.1002/pssc.200776812
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Tschumak, Elena, Lindner, J. K. N., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., As, D. J. (2010) Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c), 7 (1). 104-107 doi:10.1002/pssc.200982615
Mari, R. H., Shafi, M., Henini, M., D.Taylor, (2009) Laplace DLTS of molecular beam epitaxy GaAs grown on (100) and (211)B substrates. physica status solidi (c), 6 (12). 2873-2875 doi:10.1002/pssc.200982578
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