Dagnelund, D., Buyanova, I. A., Chen, W. M., Utsumi, A., Furukawa, Y., Wakahara, A., Yonezu, H. (2008) Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy. physica status solidi (c), 5 (2). 460-463 doi:10.1002/pssc.200777458
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy | ||
| Journal | physica status solidi (c) | ||
| Authors | Dagnelund, D. | Author | |
| Buyanova, I. A. | Author | ||
| Chen, W. M. | Author | ||
| Utsumi, A. | Author | ||
| Furukawa, Y. | Author | ||
| Wakahara, A. | Author | ||
| Yonezu, H. | Author | ||
| Year | 2008 (February) | Volume | 5 |
| Issue | 2 | ||
| Publisher | Wiley | ||
| DOI | doi:10.1002/pssc.200777458Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5115572 | Long-form Identifier | mindat:1:5:5115572:2 |
| GUID | 0 | ||
| Full Reference | Dagnelund, D., Buyanova, I. A., Chen, W. M., Utsumi, A., Furukawa, Y., Wakahara, A., Yonezu, H. (2008) Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy. physica status solidi (c), 5 (2). 460-463 doi:10.1002/pssc.200777458 | ||
| Plain Text | Dagnelund, D., Buyanova, I. A., Chen, W. M., Utsumi, A., Furukawa, Y., Wakahara, A., Yonezu, H. (2008) Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy. physica status solidi (c), 5 (2). 460-463 doi:10.1002/pssc.200777458 | ||
| In | (2008, February) physica status solidi (c) Vol. 5 (2) Wiley | ||
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