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Wang, X. J., Buyanova, I. A., Chen, W. M., Pan, C. J., Tu, C. W. (2008) Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study. Journal of Applied Physics, 103 (2). 23712pp. doi:10.1063/1.2833434

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Reference TypeJournal (article/letter/editorial)
TitleEffects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study
JournalJournal of Applied Physics
AuthorsWang, X. J.Author
Buyanova, I. A.Author
Chen, W. M.Author
Pan, C. J.Author
Tu, C. W.Author
Year2008 (January 15)Volume103
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2833434Search in ResearchGate
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Mindat Ref. ID5153813Long-form Identifiermindat:1:5:5153813:8
GUID0
Full ReferenceWang, X. J., Buyanova, I. A., Chen, W. M., Pan, C. J., Tu, C. W. (2008) Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study. Journal of Applied Physics, 103 (2). 23712pp. doi:10.1063/1.2833434
Plain TextWang, X. J., Buyanova, I. A., Chen, W. M., Pan, C. J., Tu, C. W. (2008) Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study. Journal of Applied Physics, 103 (2). 23712pp. doi:10.1063/1.2833434
In(2008, January) Journal of Applied Physics Vol. 103 (2) AIP Publishing

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