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Švrček, V., Pelant, I., Fojtı́k, P., Kočka, J., Fejfar, A., Toušek, J., Kondo, M., Matsuda, A. (2002) Surface photovoltage measurements in μc-Si:H: Manifestation of the bottom space charge region. Journal of Applied Physics, 92 (5). 2323-2329 doi:10.1063/1.1495895

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Reference TypeJournal (article/letter/editorial)
TitleSurface photovoltage measurements in μc-Si:H: Manifestation of the bottom space charge region
JournalJournal of Applied Physics
AuthorsŠvrček, V.Author
Pelant, I.Author
Fojtı́k, P.Author
Kočka, J.Author
Fejfar, A.Author
Toušek, J.Author
Kondo, M.Author
Matsuda, A.Author
Year2002 (September)Volume92
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1495895Search in ResearchGate
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Mindat Ref. ID5116413Long-form Identifiermindat:1:5:5116413:7
GUID0
Full ReferenceŠvrček, V., Pelant, I., Fojtı́k, P., Kočka, J., Fejfar, A., Toušek, J., Kondo, M., Matsuda, A. (2002) Surface photovoltage measurements in μc-Si:H: Manifestation of the bottom space charge region. Journal of Applied Physics, 92 (5). 2323-2329 doi:10.1063/1.1495895
Plain TextŠvrček, V., Pelant, I., Fojtı́k, P., Kočka, J., Fejfar, A., Toušek, J., Kondo, M., Matsuda, A. (2002) Surface photovoltage measurements in μc-Si:H: Manifestation of the bottom space charge region. Journal of Applied Physics, 92 (5). 2323-2329 doi:10.1063/1.1495895
In(2002, September) Journal of Applied Physics Vol. 92 (5) AIP Publishing

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