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Kushida-Abdelghafar, Keiko, Watanabe, Kikuo, Kikawa, Takeshi, Kamigaki, Yoshiaki, Ushio, Jiro (2002) An atomic model of the nitrous-oxide-nitrided SiO2/Si interface. Journal of Applied Physics, 92 (5). 2475-2478 doi:10.1063/1.1497720

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Reference TypeJournal (article/letter/editorial)
TitleAn atomic model of the nitrous-oxide-nitrided SiO2/Si interface
JournalJournal of Applied Physics
AuthorsKushida-Abdelghafar, KeikoAuthor
Watanabe, KikuoAuthor
Kikawa, TakeshiAuthor
Kamigaki, YoshiakiAuthor
Ushio, JiroAuthor
Year2002 (September)Volume92
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1497720Search in ResearchGate
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Mindat Ref. ID5116492Long-form Identifiermindat:1:5:5116492:4
GUID0
Full ReferenceKushida-Abdelghafar, Keiko, Watanabe, Kikuo, Kikawa, Takeshi, Kamigaki, Yoshiaki, Ushio, Jiro (2002) An atomic model of the nitrous-oxide-nitrided SiO2/Si interface. Journal of Applied Physics, 92 (5). 2475-2478 doi:10.1063/1.1497720
Plain TextKushida-Abdelghafar, Keiko, Watanabe, Kikuo, Kikawa, Takeshi, Kamigaki, Yoshiaki, Ushio, Jiro (2002) An atomic model of the nitrous-oxide-nitrided SiO2/Si interface. Journal of Applied Physics, 92 (5). 2475-2478 doi:10.1063/1.1497720
In(2002, September) Journal of Applied Physics Vol. 92 (5) AIP Publishing

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Kushida-Abdelghafar, Keiko, Watanabe, Kikuo, Ushio, Jiro, Murakami, Eiichi (2002) Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation. Applied Physics Letters, 81 (23). 4362-4364 doi:10.1063/1.1526158
Ushio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872
Ushio, Jiro, Watanabe, Kikuo, Kushida-Abdelghafar, Keiko, Maruizumi, Takuya (2003) The role of hydrogen migration in negative-bias temperature instability. Applied Surface Science, 216. 258-263 doi:10.1016/s0169-4332(03)00378-7
Ushio, Jiro, Maruizumi, Takuya, Miyao, Masanobu (1999) Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction. Applied Physics Letters, 75 (5). 680-682 doi:10.1063/1.124480
Kamigaki, Yoshiaki, Miyazaki, Takao, Yoshihiro, Naotsugu, Watanabe, Kikuo, Yokogawa, Ken’etsu (1998) Two signals in electrically detected magnetic resonance of platinum-doped silicon p–n junctions. Journal of Applied Physics, 84 (4). 2193-2198 doi:10.1063/1.368359
Shima, Akio, Jinbo, Tomoko, Natsuaki, Nobuyoshi, Ushio, Jiro, Oh, J.-H., Ono, Kanta, Oshima, Masaharu (2001) A model for the segregation and pileup of boron at the SiO2/Si interface during the formation of ultrashallow p+ junctions. Journal of Applied Physics, 89 (6). 3458-3463 doi:10.1063/1.1338990
Kushida-Abdelghafar, Keiko, Hiratani, Masahiko, Fujisaki, Yoshihisa (1999) Post-annealing effects on antireduction characteristics of IrO2/Pb(ZrxTi1−x)O3/Pt ferroelectric capacitors. Journal of Applied Physics, 85 (2). 1069-1074 doi:10.1063/1.369230
Kushida, Keiko, Abdelghafar, , Fujisaki, Yoshihisa (1998) IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to an Interlayer-Dielectric-Deposition Process. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l804
Hojo, Daisuke, Tokuda, Norio, Yamabe, Kikuo (2002) Atomic Topography Change of SiO2/Si Interfaces during Thermal Oxidation. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l505
Ishizaka, Akitoshi, Iwata, Seiichi, Kamigaki, Yoshiaki (1979) Siî—¸SiO2 interface characterization by ESCA. Surface Science, 84 (2). 355-374 doi:10.1016/0039-6028(79)90142-0
Miyata, Noriyuki, Watanabe, Heiji, Ichikawa, Masakazu (1998) HF-chemical etching of the oxide layer near a SiO2/Si(111) interface. Applied Physics Letters, 73 (26). 3923-3925 doi:10.1063/1.122937
 
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