Ushio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces | ||
Journal | Applied Physics Letters | ||
Authors | Ushio, Jiro | Author | |
Maruizumi, Takuya | Author | ||
Kushida-Abdelghafar, Keiko | Author | ||
Year | 2002 (September 2) | Volume | 81 |
Issue | 10 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.1504872Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8532936 | Long-form Identifier | mindat:1:5:8532936:8 |
GUID | 0 | ||
Full Reference | Ushio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872 | ||
Plain Text | Ushio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872 | ||
In | (2002, September) Applied Physics Letters Vol. 81 (10) AIP Publishing |
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