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Ushio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872

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Reference TypeJournal (article/letter/editorial)
TitleInterface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces
JournalApplied Physics Letters
AuthorsUshio, JiroAuthor
Maruizumi, TakuyaAuthor
Kushida-Abdelghafar, KeikoAuthor
Year2002 (September 2)Volume81
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1504872Search in ResearchGate
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Mindat Ref. ID8532936Long-form Identifiermindat:1:5:8532936:8
GUID0
Full ReferenceUshio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872
Plain TextUshio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko (2002) Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces. Applied Physics Letters, 81 (10). 1818-1820 doi:10.1063/1.1504872
In(2002, September) Applied Physics Letters Vol. 81 (10) AIP Publishing


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