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Devine, R. A. B. (2002) Mobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric. Journal of Applied Physics, 92 (6). 3162-3168 doi:10.1063/1.1499234

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Reference TypeJournal (article/letter/editorial)
TitleMobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric
JournalJournal of Applied Physics
AuthorsDevine, R. A. B.Author
Year2002 (September 15)Volume92
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1499234Search in ResearchGate
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Mindat Ref. ID5116629Long-form Identifiermindat:1:5:5116629:6
GUID0
Full ReferenceDevine, R. A. B. (2002) Mobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric. Journal of Applied Physics, 92 (6). 3162-3168 doi:10.1063/1.1499234
Plain TextDevine, R. A. B. (2002) Mobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric. Journal of Applied Physics, 92 (6). 3162-3168 doi:10.1063/1.1499234
In(2002, September) Journal of Applied Physics Vol. 92 (6) AIP Publishing

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Devine, R.A.B., Tringe, J.W., Chavez, J.R. (2002) Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films. IEEE Transactions on Nuclear Science, 49 (6) 2729-2732 doi:10.1109/tns.2002.805352
Yu, Suzhu, Wong, Terence K. S., Pita, Kantisara, Hu, Xiao, Ligatchev, Valeri (2002) Surface modified silica mesoporous films as a low dielectric constant intermetal dielectric. Journal of Applied Physics, 92 (6). 3338-3344 doi:10.1063/1.1499979
Devine, R. A. B., Vanheusden, K., Herrera, G. V. (2000) Correlation of mobile and fixed charge creation in protonated field-effect transistors. Applied Physics Letters, 77 (4). 579-581 doi:10.1063/1.127050
Devine, R. A. B, Busani, T., Quevedo-Lopez, Manuel, Alshareef, H. N. (2007) Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks. Journal of Applied Physics, 101 (10). 104101pp. doi:10.1063/1.2727435
Devine, R. A. B., Ball, D., Rowe, J. D., Tringe, J. W. (2003) Irradiation and Humidity Effects on the Leakage Current in SiO[sub x](CH[sub 3])[sub y]-Based Intermetal Dielectric Films. Journal of the Electrochemical Society, 150. doi:10.1149/1.1586926
Oborina, Elena, Campbell, Scott, Hoff, Andrew M., Gilbert, Richard, Persson, Eric (2002) Hydrogen-related mobile charge in the phosphosilicate glass–SiO2–Si structure. Journal of Applied Physics, 92 (11). 6773-6777 doi:10.1063/1.1521514
Vanheusden, K., Devine, R. A. B. (2000) The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface. Applied Physics Letters, 76 (21). 3109-3111 doi:10.1063/1.126539
Devine, R. A. B., Alshareef, H. N., Quevedo-Lopez, M. A. (2008) Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors. Journal of Applied Physics, 104 (12). 124109pp. doi:10.1063/1.3039997
Anderson, R. A., Lagasse, R. R., Schroeder, J. L. (2002) Pulsed electrical breakdown of a void-filled dielectric. Journal of Applied Physics, 91 (9). 5962-5971 doi:10.1063/1.1461058
Devine, R. A. B., Revesz, A. G. (2001) Concentration dependence of the dielectric constant in mixed oxides MxOyMp′Oq. Journal of Applied Physics, 90 (1). 389-393 doi:10.1063/1.1375806
Pilkuhn, M. H. (1969) Avalanche Breakdown in GaP. Journal of Applied Physics, 40 (8). 3162-3170 doi:10.1063/1.1658160
 
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