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Devine, R. A. B, Busani, T., Quevedo-Lopez, Manuel, Alshareef, H. N. (2007) Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks. Journal of Applied Physics, 101 (10). 104101pp. doi:10.1063/1.2727435

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Reference TypeJournal (article/letter/editorial)
TitleElectrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks
JournalJournal of Applied Physics
AuthorsDevine, R. A. BAuthor
Busani, T.Author
Quevedo-Lopez, ManuelAuthor
Alshareef, H. N.Author
Year2007 (May 15)Volume101
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2727435Search in ResearchGate
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Mindat Ref. ID5145255Long-form Identifiermindat:1:5:5145255:5
GUID0
Full ReferenceDevine, R. A. B, Busani, T., Quevedo-Lopez, Manuel, Alshareef, H. N. (2007) Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks. Journal of Applied Physics, 101 (10). 104101pp. doi:10.1063/1.2727435
Plain TextDevine, R. A. B, Busani, T., Quevedo-Lopez, Manuel, Alshareef, H. N. (2007) Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks. Journal of Applied Physics, 101 (10). 104101pp. doi:10.1063/1.2727435
In(2007, May) Journal of Applied Physics Vol. 101 (10) AIP Publishing

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Devine, R. A. B., Quevedo-Lopez, M. A., Alshareef, H. (2008) Radiation response of nanometric HfSiON/SiO2 gate stacks. Journal of Applied Physics, 103 (6). 64104pp. doi:10.1063/1.2838186
Devine, R. A. B., Alshareef, H. N., Quevedo-Lopez, M. A. (2008) Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors. Journal of Applied Physics, 104 (12). 124109pp. doi:10.1063/1.3039997
Agustin, Melody P., Alshareef, Husam, Quevedo-Lopez, Manuel A., Stemmer, Susanne (2006) Influence of AlN layers on the interface stability of HfO2 gate dielectric stacks. Applied Physics Letters, 89 (4). 41906pp. doi:10.1063/1.2236264
Devine, R. A. B., Hjalmarson, H. P., Alshareef, H. N., Quevedo-Lopez, M. (2008) Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices. Applied Physics Letters, 92 (15). 153512pp. doi:10.1063/1.2912025
Devine, R. A. B., Mee, J. K., Hjalmarson, H. P., Quevedo-Lopez, M. A., Alshareef, H. N. (2009) A simplified approach to estimating total trap contributions in negative bias temperature instability. Journal of Applied Physics, 106 (2). 24508pp. doi:10.1063/1.3160330
Samanta, Piyas, Cheng, Chin-Lung, Lee, Yao-Jen, Chan, Mansun (2009) Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks. Journal of Applied Physics, 105 (12). 124507pp. doi:10.1063/1.3148297
Busani, T., Devine, R. A. B., Hughes, H. L. (2007) Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators. Applied Physics Letters, 90 (16). 163512pp. doi:10.1063/1.2728746
Devine, R. A. B., Busani, T. (2005) Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2. Applied Physics Letters, 86 (6). 62902pp. doi:10.1063/1.1861511
Upadhyaya, G. S., Shohet, J. L. (2007) Comparison of the vacuum-ultraviolet radiation response of HfO2∕SiO2∕Si dielectric stacks with SiO2∕Si. Applied Physics Letters, 90 (7). 72904pp. doi:10.1063/1.2591371
Novikov, Yu. N. (2013) Charge transport in HfO2 due to multiphonon traps ionization mechanism in SiO2/HfO2 stacks. Journal of Applied Physics, 113 (2). 24109pp. doi:10.1063/1.4775407
Claes, D., Franco, J., Collaert, N., Linten, D., Heyns, M. (2020) Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies. Journal of Applied Physics, 128 (10) 104101pp. doi:10.1063/5.0006110
 
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