Vote for your favorite mineral in #MinCup25! - Titanite vs. Thortveitite
It's a pair of T-minerals with as versatile #titanite faces off against the home of rare earth elements #thortveitite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Busani, T., Devine, R. A. B., Hughes, H. L. (2007) Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators. Applied Physics Letters, 90 (16). 163512pp. doi:10.1063/1.2728746

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleNegative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators
JournalApplied Physics Letters
AuthorsBusani, T.Author
Devine, R. A. B.Author
Hughes, H. L.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2728746Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553558Long-form Identifiermindat:1:5:8553558:9
GUID0
Full ReferenceBusani, T., Devine, R. A. B., Hughes, H. L. (2007) Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators. Applied Physics Letters, 90 (16). 163512pp. doi:10.1063/1.2728746
Plain TextBusani, T., Devine, R. A. B., Hughes, H. L. (2007) Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators. Applied Physics Letters, 90 (16). 163512pp. doi:10.1063/1.2728746
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Devine, R. A. B., Hjalmarson, H. P., Alshareef, H. N., Quevedo-Lopez, M. (2008) Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices. Applied Physics Letters, 92 (15). 153512pp. doi:10.1063/1.2912025
Devine, R. A. B, Busani, T., Quevedo-Lopez, Manuel, Alshareef, H. N. (2007) Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks. Journal of Applied Physics, 101 (10). 104101pp. doi:10.1063/1.2727435
Mee, J. K., Devine, R. A. B. (2010) Bias stress voltage dependence for fast and slow traps resulting in negative bias temperature instability. Journal of Applied Physics, 107 (2). 24511pp. doi:10.1063/1.3283923
Kushida-Abdelghafar, Keiko, Watanabe, Kikuo, Ushio, Jiro, Murakami, Eiichi (2002) Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation. Applied Physics Letters, 81 (23). 4362-4364 doi:10.1063/1.1526158
Devine, R. A. B., Mee, J. K., Hjalmarson, H. P., Quevedo-Lopez, M. A., Alshareef, H. N. (2009) A simplified approach to estimating total trap contributions in negative bias temperature instability. Journal of Applied Physics, 106 (2). 24508pp. doi:10.1063/1.3160330
Devine, R. A. B., Alshareef, H. N., Quevedo-Lopez, M. A. (2008) Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors. Journal of Applied Physics, 104 (12). 124109pp. doi:10.1063/1.3039997
Devine, R. A. B., Busani, T. (2005) Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2. Applied Physics Letters, 86 (6). 62902pp. doi:10.1063/1.1861511
Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Franco, J., Ragnarsson, L. Ă…., Grasser, T., Groeseneken, G. (2011) Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress. Applied Physics Letters, 98 (18). 183506pp. doi:10.1063/1.3586780
Samanta, Piyas, Chan, Mansun (2004) Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias. Journal of Applied Physics, 96 (3). 1547-1555 doi:10.1063/1.1766094
Ushizaka, Hironori (2002) Generation of positive and negative charges under Fowler–Nordheim injection and breakdown. Journal of Applied Physics, 91 (11). 9204-9213 doi:10.1063/1.1473212
Tsetseris, L., Zhou, X. J., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2005) Physical mechanisms of negative-bias temperature instability. Applied Physics Letters, 86 (14). 142103pp. doi:10.1063/1.1897075
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 11, 2025 13:57:36
Go to top of page