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Voss, S., Stolwijk, N. A., Bracht, H. (2002) Spreading-resistance profiling of silicon and germanium at variable temperature. Journal of Applied Physics, 92 (8). 4809-4819 doi:10.1063/1.1499544

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Reference TypeJournal (article/letter/editorial)
TitleSpreading-resistance profiling of silicon and germanium at variable temperature
JournalJournal of Applied Physics
AuthorsVoss, S.Author
Stolwijk, N. A.Author
Bracht, H.Author
Year2002 (October 15)Volume92
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1499544Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116980Long-form Identifiermindat:1:5:5116980:4
GUID0
Full ReferenceVoss, S., Stolwijk, N. A., Bracht, H. (2002) Spreading-resistance profiling of silicon and germanium at variable temperature. Journal of Applied Physics, 92 (8). 4809-4819 doi:10.1063/1.1499544
Plain TextVoss, S., Stolwijk, N. A., Bracht, H. (2002) Spreading-resistance profiling of silicon and germanium at variable temperature. Journal of Applied Physics, 92 (8). 4809-4819 doi:10.1063/1.1499544
In(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing

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Voss, S, Bracht, H, Stolwijk, N.A (1999) Low-temperature spreading-resistance profiling for the characterization of impurity distributions in germanium. Physica B: Condensed Matter, 273. 561-564 doi:10.1016/s0921-4526(99)00573-6
Almazouzi, A., Bernardini, J., Moya, E. G., Bracht, H., Stolwijk, N. A., Mehrer, H. (1991) Diffusion, solubility, and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading‐resistance analysis. Journal of Applied Physics, 70 (3). 1345-1354 doi:10.1063/1.349591
Giese, A., Stolwijk, N. A., Bracht, H. (2000) Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information. Applied Physics Letters, 77 (5). 642-644 doi:10.1063/1.127071
Prüßing, Jan K., Hamdana, Gerry, Bougeard, Dominique, Peiner, Erwin, Bracht, Hartmut (2019) Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation. Journal of Applied Physics, 125 (8). 85105pp. doi:10.1063/1.5066617
Bracht, H., Stolwijk, N. A., Mehrer, H., Yonenaga, I. (1991) Short‐time diffusion of zinc in silicon for the study of intrinsic point defects. Applied Physics Letters, 59 (27). 3559-3561 doi:10.1063/1.106393
Bracht, H., Stolwijk, N. A., Laube, M., Pensl, G. (2000) Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism. Applied Physics Letters, 77 (20). 3188-3190 doi:10.1063/1.1325390
Chroneos, A., Grimes, R. W., Bracht, H. (2009) Impact of germanium on vacancy clustering in germanium-doped silicon. Journal of Applied Physics, 105 (1). 16102pp. doi:10.1063/1.3056387
Rüschenschmidt, K., Bracht, H., Stolwijk, N. A., Laube, M., Pensl, G., Brandes, G. R. (2004) Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion. Journal of Applied Physics, 96 (3). 1458-1463 doi:10.1063/1.1766101
Voß, S., Bracht, H., Stolwijk, N. A., Kringho/j, P., Nylandsted Larsen, A. (1998) Energy levels of Zn in Si1−XGeX alloys. Applied Physics Letters, 73 (16). 2331-2333 doi:10.1063/1.121813
Bracht, H., Stolwijk, N. A., Mehrer, H. (1991) Diffusion and solubility of copper, silver, and gold in germanium. Physical Review B, 43 (18) 14465-14477 doi:10.1103/physrevb.43.14465
Voss, S., Stolwijk, N. A., Bracht, H., Nylandsted Larsen, A., Overhof, Harald (2003) Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations. Physical Review B, 68 (3) doi:10.1103/physrevb.68.035208
 
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