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Joshi, Amol R., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) A model for crystal growth during metal induced lateral crystallization of amorphous silicon. Journal of Applied Physics, 93 (1). 175-181 doi:10.1063/1.1526937

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Reference TypeJournal (article/letter/editorial)
TitleA model for crystal growth during metal induced lateral crystallization of amorphous silicon
JournalJournal of Applied Physics
AuthorsJoshi, Amol R.Author
Krishnamohan, TejasAuthor
Saraswat, Krishna C.Author
Year2003 (January)Volume93
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1526937Search in ResearchGate
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Mindat Ref. ID5117564Long-form Identifiermindat:1:5:5117564:7
GUID0
Full ReferenceJoshi, Amol R., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) A model for crystal growth during metal induced lateral crystallization of amorphous silicon. Journal of Applied Physics, 93 (1). 175-181 doi:10.1063/1.1526937
Plain TextJoshi, Amol R., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) A model for crystal growth during metal induced lateral crystallization of amorphous silicon. Journal of Applied Physics, 93 (1). 175-181 doi:10.1063/1.1526937
In(2003, January) Journal of Applied Physics Vol. 93 (1) AIP Publishing

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Joshi, Amol R., Saraswat, Krishna C. (2003) High Performance Submicrometer CMOS with Metal Induced Lateral Crystallization of Amorphous Silicon. Journal of the Electrochemical Society, 150. doi:10.1149/1.1586302
Park, Jin-Hong, Tada, Munehiro, Kapur, Pawan, Peng, Hailin, Saraswat, Krishna C. (2008) Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate. Journal of Applied Physics, 104 (6). 64501pp. doi:10.1063/1.2978367
Kuzum, Duygu, Martens, Koen, Krishnamohan, Tejas, Saraswat, Krishna C. (2009) Characteristics of surface states and charge neutrality level in Ge. Applied Physics Letters, 95 (25). 252101pp. doi:10.1063/1.3270529
Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C. (2011) InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design. Journal of Applied Physics, 110 (1). 14503pp. doi:10.1063/1.3600220
Park, Jin-Hong, Kapur, Pawan, Saraswat, Krishna C., Peng, Hailin (2007) A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits. Applied Physics Letters, 91 (14). 143107pp. doi:10.1063/1.2793183
Wang, Dunwei, Wang, Qian, Javey, Ali, Tu, Ryan, Dai, Hongjie, Kim, Hyoungsub, McIntyre, Paul C., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics. Applied Physics Letters, 83 (12). 2432-2434 doi:10.1063/1.1611644
Park, Jin-Hong, Tada, Munehiro, Kapur, Pawan, Saraswat, Krishna C. (2008) Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits. Applied Physics Letters, 93 (18). 183512pp. doi:10.1063/1.3009201
Ma, Tianfu, Wong, Man (2002) Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films. Journal of Applied Physics, 91 (3). 1236-1241 doi:10.1063/1.1430531
Rao, R., Sun, G.C. (2004) Microwave annealing enhances Al-induced lateral crystallization of amorphous silicon thin films. Journal of Crystal Growth, 273 (1). 68-73 doi:10.1016/j.jcrysgro.2004.07.089
Liu, Yaocheng, Deal, Michael D., Saraswat, Krishna C., Plummer, James D. (2002) Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si. Applied Physics Letters, 81 (24). 4634-4636 doi:10.1063/1.1527977
Izmajlowicz, M. A. T., Flewitt, A. J., Milne, W. I., Morrison, N. A. (2003) Directional nickel-induced fielded aided lateral crystallization of amorphous silicon. Journal of Applied Physics, 94 (12). 7535pp. doi:10.1063/1.1627455
 
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