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Kuzum, Duygu, Martens, Koen, Krishnamohan, Tejas, Saraswat, Krishna C. (2009) Characteristics of surface states and charge neutrality level in Ge. Applied Physics Letters, 95 (25). 252101pp. doi:10.1063/1.3270529

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of surface states and charge neutrality level in Ge
JournalApplied Physics Letters
AuthorsKuzum, DuyguAuthor
Martens, KoenAuthor
Krishnamohan, TejasAuthor
Saraswat, Krishna C.Author
Year2009 (December 21)Volume95
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3270529Search in ResearchGate
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Mindat Ref. ID8580091Long-form Identifiermindat:1:5:8580091:5
GUID0
Full ReferenceKuzum, Duygu, Martens, Koen, Krishnamohan, Tejas, Saraswat, Krishna C. (2009) Characteristics of surface states and charge neutrality level in Ge. Applied Physics Letters, 95 (25). 252101pp. doi:10.1063/1.3270529
Plain TextKuzum, Duygu, Martens, Koen, Krishnamohan, Tejas, Saraswat, Krishna C. (2009) Characteristics of surface states and charge neutrality level in Ge. Applied Physics Letters, 95 (25). 252101pp. doi:10.1063/1.3270529
In(2009, December) Applied Physics Letters Vol. 95 (25) AIP Publishing

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Joshi, Amol R., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) A model for crystal growth during metal induced lateral crystallization of amorphous silicon. Journal of Applied Physics, 93 (1). 175-181 doi:10.1063/1.1526937
Wang, Dunwei, Wang, Qian, Javey, Ali, Tu, Ryan, Dai, Hongjie, Kim, Hyoungsub, McIntyre, Paul C., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics. Applied Physics Letters, 83 (12). 2432-2434 doi:10.1063/1.1611644
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Bozyigit, D., Rossel, C. (2009) On the extraction of interface trap density in the Pt/La2O3/Ge gate stack and the determination of the charge neutrality level in Ge. Journal of Applied Physics, 105 (12). 124521pp. doi:10.1063/1.3155830
Dimoulas, A., Tsipas, P., Sotiropoulos, A., Evangelou, E. K. (2006) Fermi-level pinning and charge neutrality level in germanium. Applied Physics Letters, 89 (25). 252110pp. doi:10.1063/1.2410241
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