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Oliviero, E., Beaufort, M. F., Barbot, J. F., van Veen, A., Fedorov, A. V. (2003) Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation. Journal of Applied Physics, 93 (1). 231-238 doi:10.1063/1.1527974

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Reference TypeJournal (article/letter/editorial)
TitleHelium implantation defects in SiC: A thermal helium desorption spectrometry investigation
JournalJournal of Applied Physics
AuthorsOliviero, E.Author
Beaufort, M. F.Author
Barbot, J. F.Author
van Veen, A.Author
Fedorov, A. V.Author
Year2003 (January)Volume93
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1527974Search in ResearchGate
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Mindat Ref. ID5117622Long-form Identifiermindat:1:5:5117622:0
GUID0
Full ReferenceOliviero, E., Beaufort, M. F., Barbot, J. F., van Veen, A., Fedorov, A. V. (2003) Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation. Journal of Applied Physics, 93 (1). 231-238 doi:10.1063/1.1527974
Plain TextOliviero, E., Beaufort, M. F., Barbot, J. F., van Veen, A., Fedorov, A. V. (2003) Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation. Journal of Applied Physics, 93 (1). 231-238 doi:10.1063/1.1527974
In(2003, January) Journal of Applied Physics Vol. 93 (1) AIP Publishing

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Oliviero, E, van Veen, A, Fedorov, A.V, Beaufort, M.F, Barbot, J.F (2002) Helium implantation defects in SiC studied by thermal helium desorption spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186 (1). 223-228 doi:10.1016/s0168-583x(01)00873-4
Oliviero, E., David, M. L., Beaufort, M. F., Barbot, J. F., van Veen, A. (2002) On the effects of implantation temperature in helium implanted silicon. Applied Physics Letters, 81 (22). 4201-4203 doi:10.1063/1.1525059
Beaufort, M.-F., Vallet, M., Nicolaï, J., Oliviero, E., Barbot, J.-F. (2015) In-situ evolution of helium bubbles in SiC under irradiation. Journal of Applied Physics, 118 (20). 205904pp. doi:10.1063/1.4936562
Leclerc, S., Declémy, A., Beaufort, M. F., Tromas, C., Barbot, J. F. (2005) Swelling of SiC under helium implantation. Journal of Applied Physics, 98 (11). 113506pp. doi:10.1063/1.2137441
Beaufort, M. F., Pailloux, F., Declémy, A., Barbot, J. F. (2003) Transmission electron microscopy investigations of damage induced by high energy helium implantation in 4H–SiC. Journal of Applied Physics, 94 (11). 7116-7120 doi:10.1063/1.1626796
David, M. L., Beaufort, M. F., Barbot, J. F. (2003) Effect of implant temperature on defects created using high fluence of helium in silicon. Journal of Applied Physics, 93 (3). 1438-1442 doi:10.1063/1.1531814
Oliviero, E., David, M. L., Beaufort, M. F., Nomgaudyte, J., Pranevicius, L., Declémy, A., Barbot, J. F. (2002) Formation of bubbles by high dose He implantation in 4H–SiC. Journal of Applied Physics, 91 (3). 1179-1186 doi:10.1063/1.1429760
Babonneau, D., Beaufort, M.-F., Declémy, A., Barbot, J.-F., Simon, J.-P. (2006) Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon. Journal of Applied Physics, 99 (11). 113507pp. doi:10.1063/1.2197305
Leclerc, S., Beaufort, M. F., Declémy, A., Barbot, J. F. (2008) Evolution of defects upon annealing in He-implanted 4H-SiC. Applied Physics Letters, 93 (12). 122101pp. doi:10.1063/1.2988262
Oliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Dislocations induced by bubble formation in high energy He implantation in silicon. Journal of Applied Physics, 89 (10). 5332-5338 doi:10.1063/1.1327289
Pawley, C J, Beaufort, M F, Oliviero, E, Hinks, J A, Barbot, J F, Donnelly, S E (2012) Anin-situTEM investigation of He bubble evolution in SiC. Journal of Physics: Conference Series, 371. 12052pp. doi:10.1088/1742-6596/371/1/012052
 
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