Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

G.-Jarrix, S., Penarier, A., Pascal, F., Delseny, C., Chay, C., Blayac, S. (2003) Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors. Journal of Applied Physics, 93 (7). 4246-4252 doi:10.1063/1.1557784

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleAnalysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors
JournalJournal of Applied Physics
AuthorsG.-Jarrix, S.Author
Penarier, A.Author
Pascal, F.Author
Delseny, C.Author
Chay, C.Author
Blayac, S.Author
Year2003 (April)Volume93
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.1557784Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5120890Long-form Identifiermindat:1:5:5120890:9
GUID0
Full ReferenceG.-Jarrix, S., Penarier, A., Pascal, F., Delseny, C., Chay, C., Blayac, S. (2003) Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors. Journal of Applied Physics, 93 (7). 4246-4252 doi:10.1063/1.1557784
Plain TextG.-Jarrix, S., Penarier, A., Pascal, F., Delseny, C., Chay, C., Blayac, S. (2003) Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors. Journal of Applied Physics, 93 (7). 4246-4252 doi:10.1063/1.1557784
In(2003, April) Journal of Applied Physics Vol. 93 (7) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Penarier, A., Pascal, F., G-Jarrix, S., Delseny, C., Riet, M., Blayac, S. (2001) Low Frequency Noise of InP/InGaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 40. 525-529 doi:10.1143/jjap.40.525
Delseny, C., Mourier, Y., Pascal, F., Jarrix, S., Lecoy, G. (1998) Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors. Journal of Applied Physics, 84 (5). 2735-2739 doi:10.1063/1.368387
Jarrix, S., Delseny, C., Pascal, F., Lecoy, G. (1997) Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities. Journal of Applied Physics, 81 (6). 2651-2657 doi:10.1063/1.363930
Delseny, C., Pascal, F., Jarrix, S., Lecoy, G. (1997) Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents. Journal of Applied Physics, 81 (6). 2658-2664 doi:10.1063/1.363931
Pascal, F., Jarrix, S., Delseny, C., Lecoy, G., Kleinpenning, T. (1996) Generation‐recombination noise analysis in heavily dopedp‐type GaAs transmission line models. Journal of Applied Physics, 79 (6). 3046-3052 doi:10.1063/1.361245
Raoult, J., Pascal, F., Delseny, C., Marin, M., Deen, M. J. (2008) Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors. Journal of Applied Physics, 103 (11). 114508pp. doi:10.1063/1.2939252
Alers, G. B., Martin, S., Hamm, R. A., Feygenson, A., Yadvish, R. D. (1995) Nonstationary 1/f noise in InP/InGaAs heterojunction bipolar transistors. Applied Physics Letters, 66 (2). 198-200 doi:10.1063/1.113133
Wang, S. Y., Chang, C. A., Chang, C. M., Chen, S. H., Ren, F., Pearton, S. J., Chyi, J.-I. (2012) Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors. Applied Physics Letters, 101 (7). 73507pp. doi:10.1063/1.4745208
Soliveres, S., Gyani, J., Delseny, C., Hoffmann, A., Pascal, F. (2007) 1∕f noise and percolation in carbon nanotube random networks. Applied Physics Letters, 90 (8). 82107pp. doi:10.1063/1.2709853
Su, Y. K., Shei, S. C., Chen, C. H. (1992) Low‐frequency noise in InP‐based NnPnN double heterojunction bipolar transistors. Applied Physics Letters, 61 (13). 1576-1578 doi:10.1063/1.107501
Chiang, Han-Wei, Rode, Johann C., Choudhary, Prateek, Rodwell, Mark J. W. (2014) Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors. Journal of Applied Physics, 116 (16). 164509pp. doi:10.1063/1.4899197
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 05:52:20
Go to top of page