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Chiang, Han-Wei, Rode, Johann C., Choudhary, Prateek, Rodwell, Mark J. W. (2014) Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors. Journal of Applied Physics, 116 (16). 164509pp. doi:10.1063/1.4899197

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Reference TypeJournal (article/letter/editorial)
TitleOptimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors
JournalJournal of Applied Physics
AuthorsChiang, Han-WeiAuthor
Rode, Johann C.Author
Choudhary, PrateekAuthor
Rodwell, Mark J. W.Author
Year2014 (October 28)Volume116
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4899197Search in ResearchGate
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Mindat Ref. ID5199181Long-form Identifiermindat:1:5:5199181:4
GUID0
Full ReferenceChiang, Han-Wei, Rode, Johann C., Choudhary, Prateek, Rodwell, Mark J. W. (2014) Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors. Journal of Applied Physics, 116 (16). 164509pp. doi:10.1063/1.4899197
Plain TextChiang, Han-Wei, Rode, Johann C., Choudhary, Prateek, Rodwell, Mark J. W. (2014) Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors. Journal of Applied Physics, 116 (16). 164509pp. doi:10.1063/1.4899197
In(2014, October) Journal of Applied Physics Vol. 116 (16) AIP Publishing

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Chiang, Han-Wei, Rode, Johann C., Choudhary, Prateek, Rodwell, Mark J. W. (2014) Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors. Journal of Applied Physics, 115 (3). 34513pp. doi:10.1063/1.4862405
Dodd, Paul, Lundstrom, Mark (1992) Minority electron transport in InP/InGaAs heterojunction bipolar transistors. Applied Physics Letters, 61 (4). 465-467 doi:10.1063/1.107886
McKinnon, W. R., McAlister, S. P., Abid, Z., Guzzo, E. E. (1996) Current blocking in InP/InGaAs double heterostructure bipolar transistors. Journal of Applied Physics, 79 (5). 2771-2778 doi:10.1063/1.361108
Won, T., Morkoç, H. (1988) High‐speed performance of InP/In0.53Ga0.47As/InP double‐heterojunction bipolar transistors. Applied Physics Letters, 52 (7). 552-554 doi:10.1063/1.99414
McAlister, S. P., McKinnon, W. R., Abid, Z., Guzzo, E. E. (1994) Hysteresis in the switching of hot electrons in InP/InGaAs double‐heterojunction bipolar transistors. Journal of Applied Physics, 76 (4). 2559-2561 doi:10.1063/1.358456
Parthasarathy, Navin, Kadow, Christoph, Griffith, Zach, Rodwell, Mark J. W., Urteaga, Miguel, Shinohara, Keisuke, Pierson, Richard, Brar, Bobby (2006) Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors. Applied Physics Letters, 89 (2). 23509pp. doi:10.1063/1.2221512
G.-Jarrix, S., Penarier, A., Pascal, F., Delseny, C., Chay, C., Blayac, S. (2003) Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors. Journal of Applied Physics, 93 (7). 4246-4252 doi:10.1063/1.1557784
Wang, S. Y., Chang, C. A., Chang, C. M., Chen, S. H., Ren, F., Pearton, S. J., Chyi, J.-I. (2012) Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors. Applied Physics Letters, 101 (7). 73507pp. doi:10.1063/1.4745208
Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K. (2013) InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reducedCcband increased RF cut-off frequency. physica status solidi (c), 10 (5). 769-772 doi:10.1002/pssc.201200674
Ohkubo, Michio, Iketani, Akira, Ijichi, Tetsurou, Kikuta, Toshio (1991) InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (21). 2697-2699 doi:10.1063/1.105888
Lin, Yu-Shyan, Jou, Yu-Jeng, Huang, Pin-Chun (2009) Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors. Applied Physics Letters, 94 (6). 63506pp. doi:10.1063/1.3075842
 
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