Ohkubo, Michio, Iketani, Akira, Ijichi, Tetsurou, Kikuta, Toshio (1991) InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (21). 2697-2699 doi:10.1063/1.105888
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition | ||
| Journal | Applied Physics Letters | ||
| Authors | Ohkubo, Michio | Author | |
| Iketani, Akira | Author | ||
| Ijichi, Tetsurou | Author | ||
| Kikuta, Toshio | Author | ||
| Year | 1991 (November 18) | Volume | 59 |
| Issue | 21 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.105888Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8496435 | Long-form Identifier | mindat:1:5:8496435:9 |
| GUID | 0 | ||
| Full Reference | Ohkubo, Michio, Iketani, Akira, Ijichi, Tetsurou, Kikuta, Toshio (1991) InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (21). 2697-2699 doi:10.1063/1.105888 | ||
| Plain Text | Ohkubo, Michio, Iketani, Akira, Ijichi, Tetsurou, Kikuta, Toshio (1991) InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (21). 2697-2699 doi:10.1063/1.105888 | ||
| In | (1991, November) Applied Physics Letters Vol. 59 (21) AIP Publishing | ||
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