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(1991, November) Applied Physics Letters Vol. 59 (21) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1991 (November)Volume59
Issue<   21   >
PublisherAIP Publishing
Mindat Ref. ID8496413Long-form Identifiermindat:1:5:8496413:7
GUID0
Full Reference(1991, November) Applied Physics Letters Vol. 59 (21) AIP Publishing
Plain Text(1991, November) Applied Physics Letters Vol. 59 (21) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 59. AIP Publishing

Contains

Boyd, G. D., Chirovsky, L. M. F., Morgan, R. A. (1991) Dynamic optical switching of symmetric self‐electro‐optic effect devices. Applied Physics Letters, 59 (21). 2631-2633 doi:10.1063/1.105920
Choi, H. K., Wang, C. A., Karam, N. H. (1991) GaAs‐based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer. Applied Physics Letters, 59 (21). 2634-2635 doi:10.1063/1.105921
Kastalsky, A., Goldman, V. J., Abeles, J. H. (1991) Possibility of infrared laser in a resonant tunneling structure. Applied Physics Letters, 59 (21). 2636-2638 doi:10.1063/1.105922
Nishii, Junji, Yamashita, Toshiharu, Yamagishi, Takashi, Tanaka, Chinari, Sone, Hiroshi (1991) Coherent infrared fiber image bundle. Applied Physics Letters, 59 (21). 2639-2641 doi:10.1063/1.105923
Moser, A., Oosenbrug, A., Latta, E. E., Forster, Th., Gasser, M. (1991) High‐power operation of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 59 (21). 2642-2644 doi:10.1063/1.105924
Julien, F. H., Vagos, P., Lourtioz, J.‐M., Yang, D. D., Planel, R. (1991) Novel all‐optical 10 ÎŒm waveguide modulator based on intersubband absorption in GaAs/AlGaAs quantum wells. Applied Physics Letters, 59 (21). 2645-2647 doi:10.1063/1.105925
Zhou, Ping, Cheng, Julian, Sun, S. Z., Schaus, C. F., Hains, C., Myers, D. R., Vawter, G. A. (1991) Surface‐emitting laser‐based optical bistable switching device. Applied Physics Letters, 59 (21). 2648-2650 doi:10.1063/1.105926
Ferm, Paul M., Knapp, Charles W., Wu, Chengjiu, Yardley, James T., Hu, Bin‐Bin, Zhang, Xi‐Cheng, Auston, David H. (1991) Femtosecond response of electro‐optic poled polymers. Applied Physics Letters, 59 (21). 2651-2653 doi:10.1063/1.105927
Chavez‐Pirson, A., Yumoto, J., Ando, H., Fukui, T., Kanbe, H. (1991) Polarization‐dependent optical nonlinearities in fractional‐layer superlattices. Applied Physics Letters, 59 (21). 2654-2656 doi:10.1063/1.105928
Jundt, D. H., Magel, G. A., Fejer, M. M., Byer, R. L. (1991) Periodically poled LiNbO3for high‐efficiency second‐harmonic generation. Applied Physics Letters, 59 (21). 2657-2659 doi:10.1063/1.105929
Zelikson, M., Weiser, K., Salzman, J., Kanicki, J. (1991) Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure. Applied Physics Letters, 59 (21). 2660-2662 doi:10.1063/1.105931
Jansen, M., Yang, J. J., Ou, S. S., Sergant, M., Mawst, L., Rozenbergs, J., Wilcox, J., Botez, D. (1991) Monolithic two‐dimensional surface‐emitting diode laser arrays mounted in the junction‐down configuration. Applied Physics Letters, 59 (21). 2663-2665 doi:10.1063/1.105932
Ma, H., Gomes, A. S. L., de Araujo, Cid B. (1991) Measurements of nondegenerate optical nonlinearity using a two‐color single beam method. Applied Physics Letters, 59 (21). 2666-2668 doi:10.1063/1.105933
Ahn, D., Yoo, T.‐K., Lee, H. Y. (1991) Optical gain of CdZnSe/ZnSe quantum well lasers. Applied Physics Letters, 59 (21). 2669-2671 doi:10.1063/1.105901
Teubner, U., KĂŒhnle, G., SchĂ€fer, F. P. (1991) Soft x‐ray spectra produced by subpicosecond laser‐double‐pulses. Applied Physics Letters, 59 (21). 2672-2674 doi:10.1063/1.105902
Mieno, T., Shoji, T., Kadota, K. (1991) Control of hydrocarbon radicals and film deposition by using a whistler wave discharge in range of radio frequency. Applied Physics Letters, 59 (21). 2675-2677 doi:10.1063/1.105903
Ren, S. L., Wang, Y., Rao, A. M., McRae, E., Holden, J. M., Hager, T., Wang, KaiAn, Lee, Wen‐Tse, Ni, H. F., Selegue, J., Eklund, P. C. (1991) Ellipsometric determination of the optical constants of C60(Buckminsterfullerene) films. Applied Physics Letters, 59 (21). 2678-2680 doi:10.1063/1.105907
Ruoff, Arthur L., Luo, Huan, Vanderborgh, Craig, Vohra, Yogesh K. (1991) Generating near‐earth‐core pressures with type‐IIa diamonds. Applied Physics Letters, 59 (21). 2681-2682 doi:10.1063/1.105882
Hickman, H. V., Dekker, A. J., Chen, T. M. (1991) Thermal noise current inside a gas of noninteracting charged bosons. Applied Physics Letters, 59 (21). 2683-2684 doi:10.1063/1.105883
Hu, S. M. (1991) Stress‐driven void growth in narrow interconnection lines. Applied Physics Letters, 59 (21). 2685-2687 doi:10.1063/1.105884
Roan, E. J., Cheng, K. Y. (1991) Long‐wavelength (1.3 ÎŒm) luminescence in InGaAs strained quantum‐well structures grown on GaAs. Applied Physics Letters, 59 (21). 2688-2690 doi:10.1063/1.105885
Kutty, T. R. N., Ravi, V. (1991) Varistor property ofn‐BaTiO3based current limiters. Applied Physics Letters, 59 (21). 2691-2693 doi:10.1063/1.105886
Cockerill, T. M., Honig, J., DeTemple, T. A., Coleman, J. J. (1991) Depressed index cladding graded barrier separate confinement single quantum well heterostructure laser. Applied Physics Letters, 59 (21). 2694-2696 doi:10.1063/1.105887
Ohkubo, Michio, Iketani, Akira, Ijichi, Tetsurou, Kikuta, Toshio (1991) InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (21). 2697-2699 doi:10.1063/1.105888
Reynolds, C. L., Lengle, S. E., Swaminathan, V. (1991) Cathodoluminescence observation of excitons confined to a two‐dimensional electron gas in a selectively doped heterostructure. Applied Physics Letters, 59 (21). 2700-2702 doi:10.1063/1.105889
Pearton, S. J., Kuo, J. M., Hobson, W. S., Lopata, J., Ren, F., Katz, A., Geva, M. (1991) Dopant passivation in AlInAs and InGaP by atomic deuterium. Applied Physics Letters, 59 (21). 2703-2705 doi:10.1063/1.105890
Dossa, D., Lew Yan Voon, Lok C., Ram‐Mohan, L. R., Parks, C., Alonso, R. G., Ramdas, A. K., Melloch, M. R. (1991) Observation of above‐barrier quasi‐bound states in asymmetric single quantum wells by piezomodulated reflectivity. Applied Physics Letters, 59 (21). 2706-2708 doi:10.1063/1.105891
Wang, Jin, Leburton, J. P. (1991) Time response of a tunable‐electron‐density quantum well and reservoir structure. Applied Physics Letters, 59 (21). 2709-2711 doi:10.1063/1.105892
Yu, Larry S., Li, Sheng S., Ho, Pin (1991) Largely enhanced bound‐to‐miniband absorption in an InGaAs multiple quantum well with short‐period superlattice InAlAs/InGaAs barrier. Applied Physics Letters, 59 (21). 2712-2714 doi:10.1063/1.105893
Medeiros Neto, J. A., Barbosa, L. C., Cesar, C. L., Alves, O. L., Galembeck, F. (1991) Quantum size effects on CdTexS1−xsemiconductor‐doped glass. Applied Physics Letters, 59 (21). 2715-2717 doi:10.1063/1.105894
Shin, S. H., Arias, J. M., Zandian, M., Pasko, J. G., DeWames, R. E. (1991) Effect of the dislocation density on minority‐carrier lifetime in molecular beam epitaxial HgCdTe. Applied Physics Letters, 59 (21). 2718-2720 doi:10.1063/1.105895
Yamamoto, E., Hamada, M., Suda, K., Nogiwa, S., Oki, T. (1991) Optical modulation characteristics of a twin‐guide laser by an electric field. Applied Physics Letters, 59 (21). 2721-2723 doi:10.1063/1.106404
Sameshima, T., Usui, S. (1991) Mechanism of pulsed laser‐induced amorphization of silicon films. Applied Physics Letters, 59 (21). 2724-2726 doi:10.1063/1.105896
Snider, Gregory L., Miller, Mark S., Rooks, Michael J., Hu, Evelyn L. (1991) Quantized conductance in ballistic constrictions at 30 K. Applied Physics Letters, 59 (21). 2727-2729 doi:10.1063/1.105897
Brandt, O., Crook, G. E., Ploog, K., Wagner, J., Maier, M. (1991) Redistribution of epitaxial Si on (001) GaAs during overgrowth by GaAs. Applied Physics Letters, 59 (21). 2730-2732 doi:10.1063/1.105898
Jackman, T. E., Charbonneau, S., Allard, L. B., Williams, R. L., Templeton, I. M., Buchanan, M., Vos, M., Mitchell, I. V., Jackman, J. A. (1991) Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects. Applied Physics Letters, 59 (21). 2733-2735 doi:10.1063/1.105899
Schweizer, T., Köhler, K., Rothemund, W., Ganser, P. (1991) Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures. Applied Physics Letters, 59 (21). 2736-2738 doi:10.1063/1.105900
Brugger, H., MĂŒssig, H., Wölk, C., Kern, K., Heitmann, D. (1991) Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence. Applied Physics Letters, 59 (21). 2739-2741 doi:10.1063/1.105904
Bolmont, D., Bischoff, J. L., Lutz, F., Kubler, L. (1991) Room‐temperature Si3N4and Ge3N4growths by Si and Ge surface irradiation with a N2electron cyclotron resonance plasma: An x‐ray photoemission study. Applied Physics Letters, 59 (21). 2742-2744 doi:10.1063/1.105905
Koren, G., Polturak, E., Aharoni, E., Cohen, D. (1991) Characteristics of all YBa2Cu3O7edge junctions operating above 80 K. Applied Physics Letters, 59 (21). 2745-2747 doi:10.1063/1.105906
Kao, H. L., Kwo, J., Fleming, R. M., Hong, M., Mannaerts, J. P. (1991) Insitugrowth and properties of single‐crystalline‐like La2−xSrxCuO4epitaxial films by off‐axis sputtering. Applied Physics Letters, 59 (21). 2748-2750 doi:10.1063/1.105876
Friedl, G., Roas, B., Römheld, M., Schultz, L., Jutzi, W. (1991) Transport properties of epitaxial YBa2Cu3Oxfilms at step edges. Applied Physics Letters, 59 (21). 2751-2753 doi:10.1063/1.105877
Gao, J., Boguslavskij, Yu., Klopman, B. B. G., Terpstra, D., Gerritsma, G. J., Rogalla, H. (1991) Characteristics of advanced YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Oxedge type junctions. Applied Physics Letters, 59 (21). 2754-2756 doi:10.1063/1.105878
Hellman, F. (1991) Measurement of magnetic anisotropy of ferrimagnets near compensation. Applied Physics Letters, 59 (21). 2757-2759 doi:10.1063/1.105879
Kido, Junji, Nagai, Katsutoshi, Okamoto, Yoshiyuki, Skotheim, Terje (1991) Poly(methylphenylsilane) film as a hole transport layer in electroluminescent devices. Applied Physics Letters, 59 (21). 2760-2762 doi:10.1063/1.105880

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