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Pearton, S. J., Kuo, J. M., Hobson, W. S., Lopata, J., Ren, F., Katz, A., Geva, M. (1991) Dopant passivation in AlInAs and InGaP by atomic deuterium. Applied Physics Letters, 59 (21). 2703-2705 doi:10.1063/1.105890

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Reference TypeJournal (article/letter/editorial)
TitleDopant passivation in AlInAs and InGaP by atomic deuterium
JournalApplied Physics Letters
AuthorsPearton, S. J.Author
Kuo, J. M.Author
Hobson, W. S.Author
Lopata, J.Author
Ren, F.Author
Katz, A.Author
Geva, M.Author
Year1991 (November 18)Volume59
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.105890Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8496439Long-form Identifiermindat:1:5:8496439:5
GUID0
Full ReferencePearton, S. J., Kuo, J. M., Hobson, W. S., Lopata, J., Ren, F., Katz, A., Geva, M. (1991) Dopant passivation in AlInAs and InGaP by atomic deuterium. Applied Physics Letters, 59 (21). 2703-2705 doi:10.1063/1.105890
Plain TextPearton, S. J., Kuo, J. M., Hobson, W. S., Lopata, J., Ren, F., Katz, A., Geva, M. (1991) Dopant passivation in AlInAs and InGaP by atomic deuterium. Applied Physics Letters, 59 (21). 2703-2705 doi:10.1063/1.105890
In(1991, November) Applied Physics Letters Vol. 59 (21) AIP Publishing

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Ren, F., Hobson, W. S., Lothian, J. R., Lopata, J., Caballero, J. A., Pearton, S. J., Cole, M. W. (1995) High rate dry etching of InGaP in BCl3 plasma chemistries. Applied Physics Letters, 67 (17). 2497-2499 doi:10.1063/1.114437
Pearton, S. J., Hobson, W. S., Kuo, J. M., Luftman, H. S., Katz, A., Ren, F. (1992) Activation and diffusion characteristics of implanted Si and Be in Al0.5In0.5P. Applied Physics Letters, 60 (9). 1117-1119 doi:10.1063/1.106434
Pearton, S. J., Kuo, J. M., Ren, F., Katz, A., Perley, A. P. (1991) Ion implantation doping and isolation of In0.5Ga0.5P. Applied Physics Letters, 59 (12). 1467-1469 doi:10.1063/1.105290
Lee, J. W., Pearton, S. J., Abernathy, C. R., Hobson, W. S., Ren, F. (1995) Damage introduction in InGaP by electron cyclotron resonance Ar plasmas. Applied Physics Letters, 67 (21). 3129-3131 doi:10.1063/1.114856
Swaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733
Pearton, S. J., Abernathy, C. R., Lopata, J. (1991) Thermal stability of dopant‐hydrogen pairs in GaAs. Applied Physics Letters, 59 (27). 3571-3573 doi:10.1063/1.105635
Katz, A., Pearton, S. J., Geva, M. (1991) Self‐aligned technology for tungsten‐contacted InP‐based etched mesa laser devices. Applied Physics Letters, 59 (3). 286-288 doi:10.1063/1.105599
Cole, M. W., Han, W. Y., Pfeffer, R. L., Eckart, D. W., Ren, F., Hobson, W. S., Lothian, J. R., Lopata, J., Caballero, J. A., Pearton, S. J. (1996) A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers. Journal of Applied Physics, 79 (6). 3286-3289 doi:10.1063/1.361227
Bylsma, R. B., Hobson, W. S., Lopata, J., Zydzik, G. J., Geva, M., Asom, M. T., Pearton, S. J., Thomas, P. M., Bridenbaugh, P. M., Washington, M. A., Roccasecca, D. D., Wilt, D. P. (1994) Carbon‐doped impurity induced layer disorder 0.98 μm lasers. Journal of Applied Physics, 76 (1). 590-592 doi:10.1063/1.357048
Jang, Soohwan, Chen, Jau-Jiun, Kang, B. S., Ren, F., Norton, D. P., Pearton, S. J., Lopata, J., Hobson, W. S. (2005) Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source. Applied Physics Letters, 87 (22). 222113pp. doi:10.1063/1.2137988
Chakrabarti, U. K., Pearton, S. J., Hobson, W. S., Lopata, J., Swaminathan, V. (1990) Hydrogenation of GaAs‐on‐InP. Applied Physics Letters, 57 (9). 887-889 doi:10.1063/1.103394
 
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