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Moser, A., Oosenbrug, A., Latta, E. E., Forster, Th., Gasser, M. (1991) High‐power operation of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 59 (21). 2642-2644 doi:10.1063/1.105924

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐power operation of strained InGaAs/AlGaAs single quantum well lasers
JournalApplied Physics Letters
AuthorsMoser, A.Author
Oosenbrug, A.Author
Latta, E. E.Author
Forster, Th.Author
Gasser, M.Author
Year1991 (November 18)Volume59
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.105924Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8496483Long-form Identifiermindat:1:5:8496483:6
GUID0
Full ReferenceMoser, A., Oosenbrug, A., Latta, E. E., Forster, Th., Gasser, M. (1991) High‐power operation of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 59 (21). 2642-2644 doi:10.1063/1.105924
Plain TextMoser, A., Oosenbrug, A., Latta, E. E., Forster, Th., Gasser, M. (1991) High‐power operation of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 59 (21). 2642-2644 doi:10.1063/1.105924
In(1991, November) Applied Physics Letters Vol. 59 (21) AIP Publishing

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Moser, A., Latta, E.‐E., Webb, D. J. (1989) Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers. Applied Physics Letters, 55 (12). 1152-1154 doi:10.1063/1.101681
Chen, T. R., Eng, L. E., Zhuang, Y. H., Xu, Y. J., Zaren, H., Yariv, A. (1990) High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers. Applied Physics Letters, 57 (26). 2762-2763 doi:10.1063/1.103779
Arent, D. J., Brovelli, L., Jäckel, H., Marclay, E., Meier, H. P. (1990) High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates. Applied Physics Letters, 56 (20). 1939-1941 doi:10.1063/1.103028
Bour, D. P., Gilbert, D. B., Elbaum, L., Harvey, M. G. (1988) Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser. Applied Physics Letters, 53 (24). 2371-2373 doi:10.1063/1.100233
Larsson, Anders, Cody, Jeffrey, Lang, Robert J. (1989) Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency. Applied Physics Letters, 55 (22). 2268-2270 doi:10.1063/1.102034
Kesler, Morris P., Harder, Christoph S., Latta, Eberhard E. (1991) Carrier heating in AlGaAs single quantum well laser diodes. Applied Physics Letters, 59 (22). 2775-2777 doi:10.1063/1.105856
Jakubowicz, A., Oosenbrug, A., Forster, Th. (1993) Laser operation‐induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes. Applied Physics Letters, 63 (9). 1185-1187 doi:10.1063/1.109765
Choi, H. K., Wang, C. A. (1990) InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Applied Physics Letters, 57 (4). 321-323 doi:10.1063/1.103678
Nagarajan, Radhakrishnan, Fukushima, Toru, Bowers, John E., Geels, Randall S., Coldren, Larry A. (1991) High‐speed InGaAs/GaAs strained multiple quantum well lasers with low damping. Applied Physics Letters, 58 (21). 2326-2328 doi:10.1063/1.104910
Offsey, S. D., Lester, L. F., Schaff, W. J., Eastman, L. F. (1991) High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers. Applied Physics Letters, 58 (21). 2336-2338 doi:10.1063/1.104914
Lam, Yeeloy, Loehr, John P., Singh, Jasprit (1991) Comparison of mode suppression and large signal modulation between lattice matched and strained InGaAs/AlGaAs quantum well lasers. Applied Physics Letters, 59 (19). 2381-2383 doi:10.1063/1.106022
 
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