Tokumitsu, E., Dentai, A. G., Joyner, C. H., Chandrasekhar, S. (1990) InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region. Applied Physics Letters, 57 (26). 2841-2843 doi:10.1063/1.104107
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region | ||
| Journal | Applied Physics Letters | ||
| Authors | Tokumitsu, E. | Author | |
| Dentai, A. G. | Author | ||
| Joyner, C. H. | Author | ||
| Chandrasekhar, S. | Author | ||
| Year | 1990 (December 24) | Volume | 57 |
| Issue | 26 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.104107Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8492705 | Long-form Identifier | mindat:1:5:8492705:7 |
| GUID | 0 | ||
| Full Reference | Tokumitsu, E., Dentai, A. G., Joyner, C. H., Chandrasekhar, S. (1990) InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region. Applied Physics Letters, 57 (26). 2841-2843 doi:10.1063/1.104107 | ||
| Plain Text | Tokumitsu, E., Dentai, A. G., Joyner, C. H., Chandrasekhar, S. (1990) InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region. Applied Physics Letters, 57 (26). 2841-2843 doi:10.1063/1.104107 | ||
| In | (1990, December) Applied Physics Letters Vol. 57 (26) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
