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Ohkubo, Michio, Ijichi, Tetsuro, Iketani, Akira, Kikuta, Toshio (1992) High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition. Applied Physics Letters, 60 (12). 1413-1414 doi:10.1063/1.107306

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Reference TypeJournal (article/letter/editorial)
TitleHigh power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition
JournalApplied Physics Letters
AuthorsOhkubo, MichioAuthor
Ijichi, TetsuroAuthor
Iketani, AkiraAuthor
Kikuta, ToshioAuthor
Year1992 (March 23)Volume60
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.107306Search in ResearchGate
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Mindat Ref. ID8498013Long-form Identifiermindat:1:5:8498013:5
GUID0
Full ReferenceOhkubo, Michio, Ijichi, Tetsuro, Iketani, Akira, Kikuta, Toshio (1992) High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition. Applied Physics Letters, 60 (12). 1413-1414 doi:10.1063/1.107306
Plain TextOhkubo, Michio, Ijichi, Tetsuro, Iketani, Akira, Kikuta, Toshio (1992) High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition. Applied Physics Letters, 60 (12). 1413-1414 doi:10.1063/1.107306
In(1992, March) Applied Physics Letters Vol. 60 (12) AIP Publishing

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Ohkubo, Michio, Iketani, Akira, Ijichi, Tetsurou, Kikuta, Toshio (1991) InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (21). 2697-2699 doi:10.1063/1.105888
Imajo, Y., Kasukawa, A., Namegaya, T., Kikuta, T. (1992) 1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition. Applied Physics Letters, 61 (21). 2506-2508 doi:10.1063/1.108163
Joma, M., Horikawa, H., Matsui, Y., Kamijoh, T. (1991) High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 58 (20). 2220-2222 doi:10.1063/1.104932
York, P. K., Beernink, K. J., Fernández, G. E., Coleman, J. J. (1989) InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (6). 499-501 doi:10.1063/1.100935
Lane, B., Wu, D., Rybaltowski, A., Yi, H., Diaz, J., Razeghi, M. (1997) Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition. Applied Physics Letters, 70 (4). 443-445 doi:10.1063/1.118176
Beernink, K. J., York, P. K., Coleman, J. J. (1989) Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (25). 2585-2587 doi:10.1063/1.101986
Feketa, D., Chan, K. T., Ballantyne, J. M., Eastman, L. F. (1986) Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition. Applied Physics Letters, 49 (24). 1659-1660 doi:10.1063/1.97258
Burnham, R. D., Scifres, D. R., Streifer, W. (1982) Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 41 (3). 228-230 doi:10.1063/1.93476
Sugiura, Hideo, Noguchi, Yoshio, Iga, Ryuzo, Yamada, Takeshi, Kamada, Hidehiko, Sakai, Yoshihisa, Yasaka, Hiroshi (1992) Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy. Applied Physics Letters, 61 (3). 318-320 doi:10.1063/1.108477
Sato, Michio, Horikoshi, Yoshiji (1989) Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett.53, 495 (1988)]. Applied Physics Letters, 55 (16). 1689 doi:10.1063/1.102211
Xing, Q. J., Brebner, J. L., Masut, R. A., Ahmad, G., Zhao, G., Tran, C. A., Isnard, L. (1994) Strained InAs/InP quantum well heterostructure lasers grown by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 65 (5). 567-569 doi:10.1063/1.112297
 
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