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Goto, Hiroki, Lee, Hyun-Jae, Lee, Seogwoo, Cho, Meoung-Whan, Yao, Takafumi (2011) Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off. physica status solidi (c), 8 (7). 2123-2126 doi:10.1002/pssc.201001026

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Reference TypeJournal (article/letter/editorial)
TitleFree-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off
Journalphysica status solidi (c)
AuthorsGoto, HirokiAuthor
Lee, Hyun-JaeAuthor
Lee, SeogwooAuthor
Cho, Meoung-WhanAuthor
Yao, TakafumiAuthor
Year2011 (July)Volume8
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.201001026Search in ResearchGate
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Mindat Ref. ID5121507Long-form Identifiermindat:1:5:5121507:9
GUID0
Full ReferenceGoto, Hiroki, Lee, Hyun-Jae, Lee, Seogwoo, Cho, Meoung-Whan, Yao, Takafumi (2011) Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off. physica status solidi (c), 8 (7). 2123-2126 doi:10.1002/pssc.201001026
Plain TextGoto, Hiroki, Lee, Hyun-Jae, Lee, Seogwoo, Cho, Meoung-Whan, Yao, Takafumi (2011) Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off. physica status solidi (c), 8 (7). 2123-2126 doi:10.1002/pssc.201001026
In(2011, July) physica status solidi (c) Vol. 8 (7) Wiley

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Park, Jinsub, Lee, Wook Hyun, Lee, Seog Woo, Ha, Jun-Seok, Cho, Meoung Whan, Yao, Takafumi (2011) Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy. physica status solidi (c), 8 (7). 2013-2015 doi:10.1002/pssc.201000880
Lee, Wookhyun, Lee, Seogwoo, Goto, Hiroki, Ko, Hyunchul, Cho, Meoungwhan, Yao, Takafumi (2006) Novel buffer layer for the growth of GaN on c-sapphire. physica status solidi (c), 3 (6). 1388-1391 doi:10.1002/pssc.200565410
Lee, Sang Hyun, Lee, Hyun Jung, Goto, Hiroki, Cho, Meong-whan, Yao, Takafumi (2007) Fabrication of porous ZnO nanostructures and morphology control. physica status solidi (c), 4 (5). 1747-1750 doi:10.1002/pssc.200674279
Lee, S. W., Goto, H., Minegishi, T., Lee, W. H., Ha, J. S., Lee, H. J., Lee, Hyo-jong, Lee, S. H., Goto, T., Hanada, T., Cho, M. W., Yao, T. (2007) Characterization of free-standing GaN substrates prepared by self lift-off. physica status solidi (c), 4 (7). 2617-2620 doi:10.1002/pssc.200674783
Lee, Hyun-Jae, Ha, Jun-Seok, Lee, Hyo-Jong, Lee, S. W., Fujii, K., Hong, S. K., Chang, J. H., Cho, M. W., Goto, Takenari, Yao, T. (2009) Fabrication of free-standing GaN substrate using evaporable buffer layer (EBL). physica status solidi (c), 6. doi:10.1002/pssc.200880874
Ha, Jun-Seok, Lee, Hyo-Jong, Lee, Seog Woo, Lee, Hyun Jae, Lee, Sang Hyun, Goto, Hiroki, Cho, Meoung Whan, Yao, Takafumi, Hong, Soon-Ku, Toba, Ryuichi, Lee, Jae Wook, Lee, Jeong Yong (2008) Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands. Applied Physics Letters, 92 (9). 91906pp. doi:10.1063/1.2890488
Goto, H., Lee, S. W., Lee, H. J., Lee, Hyo-Jong, Ha, J. S., Cho, M. W., Yao, T. (2008) Chemical lift-off of GaN epitaxial films grown on c-sapphire substrates with CrN buffer layers. physica status solidi (c), 5 (6). 1659-1661 doi:10.1002/pssc.200778573
Lee, H. J., Lee, S. W., Goto, H., Lee, Hyo-Jong, Ha, J. S., Cho, M. W., Yao, T. (2007) Free standing GaN layers with GaN nanorod buffer layer. physica status solidi (c), 4 (7). 2268-2271 doi:10.1002/pssc.200674858
Lee, Hyo-Jong, Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Seog Woo, Lee, Sang Hyun, Goto, Hiroki, Hong, Soon-Ku, Cho, Meoung Whan, Yao, Takafumi, Fujito, Kenji, Shimoyama, Kenji, Namita, Hideo, Nagao, Satoru (2009) Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer. Journal of Crystal Growth, 311 (3). 470-473 doi:10.1016/j.jcrysgro.2008.09.054
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Fujii, Katsushi, Nakayama, Hitoshi, Sato, Keiichi, Kato, Takashi, Cho, Meoung-Whan, Yao, Takafumi (2008) Improvement of hydrogen generation efficiency using GaN photoelectrochemical reaction in electrolytes with alcohol. physica status solidi (c), 5 (6). 2333-2335 doi:10.1002/pssc.200778425
 
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