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Fissel, Andreas, Krügener, Jan, Osten, H. Jörg (2012) Preparation of large step-free mesas on Si(111) by molecular beam epitaxy. physica status solidi (c), 9 (10). 2050-2053 doi:10.1002/pssc.201200139

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of large step-free mesas on Si(111) by molecular beam epitaxy
Journalphysica status solidi (c)
AuthorsFissel, AndreasAuthor
Krügener, JanAuthor
Osten, H. JörgAuthor
Year2012 (October)Volume9
Issue10
PublisherWiley
DOIdoi:10.1002/pssc.201200139Search in ResearchGate
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Mindat Ref. ID5122032Long-form Identifiermindat:1:5:5122032:7
GUID0
Full ReferenceFissel, Andreas, Krügener, Jan, Osten, H. Jörg (2012) Preparation of large step-free mesas on Si(111) by molecular beam epitaxy. physica status solidi (c), 9 (10). 2050-2053 doi:10.1002/pssc.201200139
Plain TextFissel, Andreas, Krügener, Jan, Osten, H. Jörg (2012) Preparation of large step-free mesas on Si(111) by molecular beam epitaxy. physica status solidi (c), 9 (10). 2050-2053 doi:10.1002/pssc.201200139
In(2012, October) physica status solidi (c) Vol. 9 (10) Wiley

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Fissel, Andreas, Roy Chaudhuri, Ayan, Krügener, Jan, Jörg Osten, H. (2015) Influence of (7×7)–“1×1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111). Journal of Crystal Growth, 425. 154-157 doi:10.1016/j.jcrysgro.2015.02.041
Fissel, Andreas, Krügener, Jan, Osten, Hans Jörg (2009) Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction. Surface Science, 603 (3). 477-481 doi:10.1016/j.susc.2008.12.004
Krügener, Jan, Osten, H. Jörg, Fissel, Andreas (2013) Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7×7)-“1×1” surface phase transition. Surface Science, 618. 27-35 doi:10.1016/j.susc.2013.08.017
Fissel, Andreas, Krügener, Jan, Schwendt, Dominik, Osten, H. Jörg (2010) Role of boron and (√3 × √3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study. physica status solidi (a), 207 (2). 245-253 doi:10.1002/pssa.200982433
Chaudhuri, Ayan Roy, Fissel, A., Osten, H. Jörg (2014) Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3thin films on Si. physica status solidi (c), 11 (9). 1412-1416 doi:10.1002/pssc.201300596
Fissel, Andreas, Chaudhuri, Ayan Roy, Krügener, Jan, Jörg Osten, H. (2019) Corrigendum to “Influence of (7 × 7)–“1 × 1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(1 1 1)”. [J. Cryst. Growth 425 (2015) 154–157]. Journal of Crystal Growth, 524. 125155pp. doi:10.1016/j.jcrysgro.2019.125155
Kizu, R., Yamaguchi, M., Amano, H. (2013) Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply. physica status solidi (c), 10 (11). 1365-1368 doi:10.1002/pssc.201300256
Landré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Daudin, B. (2010) Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy. physica status solidi (c), 7 (7). 2246-2248 doi:10.1002/pssc.200983613
Toyota, H., Mikami, A., Endoh, T., Jinbo, Y., Uchitomi, N. (2011) Effect of Sb template layer on GaSb thin films grown on Si(111) substrate by molecular beam epitaxy. physica status solidi (c), 8 (2). 269-271 doi:10.1002/pssc.201000522
Kizu, R., Yamaguchi, M., Amano, H. (2014) Erratum: Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply. physica status solidi (c), 11 (1). 178 doi:10.1002/pssc.201360002
Managaki, Nobuto, Iizuka, Norio (2008) Influence of Si doping on size of GaN quantum dots grown by molecular beam epitaxy under Ga-rich conditions. physica status solidi (c), 5 (9). 3011-3013 doi:10.1002/pssc.200779221
 
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