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(2012, October) physica status solidi (c) Vol. 9 (10) Wiley

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Journalphysica status solidi (c)
Year2012 (October)Volume9
Issue<   10   >
PublisherWiley
Mindat Ref. ID5121982Long-form Identifiermindat:1:5:5121982:6
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Full Reference(2012, October) physica status solidi (c) Vol. 9 (10) Wiley
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(2012) Cover Picture: Phys. Status Solidi C 10-11/2012. physica status solidi (c), 9 (10). doi:10.1002/pssc.201290017
(2012) Back Cover: Phys. Status Solidi C 10-11/2012. physica status solidi (c), 9 (10). doi:10.1002/pssc.201290018
(2012) Issue Information: Phys. Status Solidi C 10-11/2012. physica status solidi (c), 9 (10). doi:10.1002/pssc.201290019
(2012) physica status solidi (c), 9 (10). Wiley. doi:10.1002/pssc.v9.10/11
(2012) Contents: Phys. Status Solidi C 10-11/2012. physica status solidi (c), 9 (10). 1857-1864 doi:10.1002/pssc.201260148
Kissinger, G., Pizzini, S., Yamada-Kaneta, H., Kang, Junyong (2012) Preface: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications. physica status solidi (c), 9 (10). 1865-1867 doi:10.1002/pssc.201260149
Coscia, U., Ambrosone, G., Basa, D. K., Rigato, V., Ballarini, M., Virga, A., Ferrero, S., Mercaldo, L. V. (2012) Growth and characterization of silicon nanocrystallites embedded in amorphous silicon carbon matrix by PECVD. physica status solidi (c), 9 (10). 1869-1872 doi:10.1002/pssc.201200190
Tan, L. T., Lim, A. H., Chee, Z. Y., Wong, Y. L., Huang, Y. C., Ong, H. W., Wee, Q. X., Ho, J. W., Steeman, Rob, Chua, S. J. (2012) Hierarchical nano/microstructures on silicon surface with ultra low reflectance for photovoltaic applications. physica status solidi (c), 9 (10). 1873-1877 doi:10.1002/pssc.201200030
Ehrhardt, Fabien, Ferblantier, Gérald, Ulhaq-Bouillet, Corinne, Muller, Dominique, Slaoui, Abdelilah (2012) Silicon nanostructures in silicon oxynitride for PV application: effect of argon. physica status solidi (c), 9 (10). 1878-1883 doi:10.1002/pssc.201200211
Maeda, Yoshihito, Nishimura, Kentaro, Nakajima, Takahito, Matsukura, Bui, Narumi, Kazumasa, Sakai, Seiji (2012) Photoluminescence properties of carbon-doped β-FeSi2nanocrystals. physica status solidi (c), 9 (10). 1884-1887 doi:10.1002/pssc.201200058
Maeda, Yoshihito, Nishimura, Kentaro, Nakajima, Takahito, Matsukura, Bui, Narumi, Kazumasa, Sakai, Seiji (2012) Enhancement of IR light emission from β-FeSi2nanocrystals embedded in Si. physica status solidi (c), 9 (10). 1888-1891 doi:10.1002/pssc.201200072
Garozzo, Cristina, Puglisi, Rosaria Anna, Lombardo, Salvatore (2012) Structural and chemical characterization of nanocrystalline and amorphous hydrogenated Si films. physica status solidi (c), 9 (10). 1892-1895 doi:10.1002/pssc.201200352
Chouaibi, Bassem, Radaoui, Moufid, Benfredj, Amel, Romdhane, Samir, Bouaïcha, Mongi, Bouchriha, Habib (2012) Porosity dependence of positive magnetoconductance in n-type porous silicon. physica status solidi (c), 9 (10). 1896-1899 doi:10.1002/pssc.201200346
Castaldo, Anna, Addonizio, Maria Luisa, Antonaia, Alessandro, Nicotra, Giuseppe (2012) A new route for fabrication of silicon QDs in a dielectric matrix of silica and silicate. physica status solidi (c), 9 (10). 1900-1903 doi:10.1002/pssc.201200077
Umarova, F. T., Normurodov, A. B., Turaeva, N. N. (2012) Size-dependent structural properties of quasi-one-dimensional silicon clusters. physica status solidi (c), 9 (10). 1904-1907 doi:10.1002/pssc.201200228
Simonds, Brian J., Perez-Würfl, Ivan, So, Yong-Heng, Wan, Alan S., McMurray, Sarah, Taylor, P. Craig (2012) Phosphorous doping of superlattice silicon quantum dots in silicon dioxide. physica status solidi (c), 9 (10). 1908-1911 doi:10.1002/pssc.201200241
Herr, Ulrich, Riedmueller, Benjamin, Haddad, Mike, AbuShgair, Khaleel, Madel, Manfred, Jakob, Julian Benjamin, Thonke, Klaus (2012) Investigation of Si nanowires from VLS growth. physica status solidi (c), 9 (10). 1912-1915 doi:10.1002/pssc.201200237
Tchelidze, Tamar, Davydok, Anton (2012) Strain distribution in GaAs/Si quantum wires. physica status solidi (c), 9 (10). 1916-1919 doi:10.1002/pssc.201200336
Will, Johannes, Gröschel, Alexander, Bergmann, Christoph, Magerl, Andreas (2012) In-situ measurement of thickness-dependent Pendellösung oscillations from a precipitation process in silicon at 650 °C. physica status solidi (c), 9 (10). 1920-1923 doi:10.1002/pssc.201200064
Kumar, Arul, Gencarelli, Federica, Kambham, Ajay Kumar, Gilbert, Matthieu, Vincent, Benjamin, Vandervorst, Wilfried (2012) Study of Sn migration during relaxation of Ge1-xSnxlayers using atom probe tomography. physica status solidi (c), 9 (10). 1924-1930 doi:10.1002/pssc.201200222
Inoue, Naohisa, Goto, Yasunori, Seki, Hirofumi, Watanabe, Kaori, Oyama, Hidenori, Kawamura, Yuichi (2012) Infrared measurement and irradiation of ultra low carbon concentration silicon crystal. physica status solidi (c), 9 (10). 1931-1936 doi:10.1002/pssc.201200080
Nouri, H., Bouaïcha, M., Ben Rabha, M., Bessaïs, B. (2012) Gettering effect in grain boundaries of multi-crystalline silicon. physica status solidi (c), 9 (10). 1937-1941 doi:10.1002/pssc.201200193
Feklisova, O. V., Yu, X., Yang, D., Yakimov, E. B. (2012) Effect of metal contamination on recombination properties of extended defects in multicrystalline Si. physica status solidi (c), 9 (10). 1942-1946 doi:10.1002/pssc.201200138
Sueoka, Koji, Kamiyama, Eiji, Kariyazaki, Hiroaki, Vanhellemont, Jan (2012) DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si. physica status solidi (c), 9 (10). 1947-1951 doi:10.1002/pssc.201200071
Oliveira, Tiago A., Torres, Vítor J.B. (2012) Ab initio modelling of boron related defects in amorphous silicon. physica status solidi (c), 9 (10). 1952-1954 doi:10.1002/pssc.201200256
Günther, Vivien, Mauß, Fabian, Klauer, Christian, Schlawitschek, Christiane (2012) Kinetic Monte Carlo simulation of the epitaxial growth of Si(100). physica status solidi (c), 9 (10). 1955-1962 doi:10.1002/pssc.201200340
Müller, Thomas C. M., Pieters, Bart E., Kirchartz, Thomas, Carius, Reinhard, Rau, Uwe (2012) Modelling of photo- and electroluminescence of hydrogenated microcrystalline silicon solar cells. physica status solidi (c), 9 (10). 1963-1967 doi:10.1002/pssc.201200428
Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., Lindner, J. K. N. (2012) First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. physica status solidi (c), 9 (10). 1968-1973 doi:10.1002/pssc.201200198
Kunert, H. W., Machatine, A. G. J., Niyongabo, P., Govender, M., Mwakikunga, B. W. (2012) Scattering tensors and optical transitions in Si and Ge. physica status solidi (c), 9 (10). 1974-1977 doi:10.1002/pssc.201200068
Kunert, H. W., Machatine, A. G. J., Niyongabo, P., Govender, M., Mwakikunga, B. W. (2012) Clebsch-Gordan coefficients for scattering processes in Si and Ge. physica status solidi (c), 9 (10). 1978-1980 doi:10.1002/pssc.201200097
Tanay, Florent, Dubois, Sébastien, Enjalbert, Nicolas, Veirman, Jordi, Gidon, Pierre, Périchaud, Isabelle (2012) Effects of germanium doping on the boron-oxygen complex formation in silicon solar cells. physica status solidi (c), 9 (10). 1981-1986 doi:10.1002/pssc.201200230
Voronkov, Vladimir, Falster, Robert (2012) Vacancy out-diffusion in nitrogen-doped silicon. physica status solidi (c), 9 (10). 1987-1991 doi:10.1002/pssc.201200036
Tang, C. K., Vines, L., Svensson, B. G., Monakhov, E. V. (2012) Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon. physica status solidi (c), 9 (10). 1992-1995 doi:10.1002/pssc.201200163
Kolkovsky, Vladimir, Scheffler, Leopold, Weber, Joerg (2012) A re-examination of the interstitial Ti levels in Si. physica status solidi (c), 9 (10). 1996-1999 doi:10.1002/pssc.201200141
Santos, P., Coutinho, J., Rayson, M. J., Briddon, P. R. (2012) Electrical activity of multivacancy defects in silicon. physica status solidi (c), 9 (10). 2000-2004 doi:10.1002/pssc.201200063
Mica, Isabella, Polignano, Maria Luisa, Codegoni, Davide, Mauri, Aurelio, Soncini, Valter (2012) Defect generation by argon implantation: microscopy characterization and electrical properties. physica status solidi (c), 9 (10). 2005-2008 doi:10.1002/pssc.201200074
Ganagona, Naveengoud, Raeissi, Bahman, Vines, Lasse, Monakhov, Edouard V., Svensson, Bengt G. (2012) Defects in p-type Cz-silicon irradiated at elevated temperatures. physica status solidi (c), 9 (10). 2009-2012 doi:10.1002/pssc.201200217
Socher, S., Lavrov, E. V., Weber, J. (2012) Raman scattering study on hydrogen-induced defects in silicon used in the ion-cut process. physica status solidi (c), 9 (10). 2013-2016 doi:10.1002/pssc.201200242
Hvidsten Dahl, Espen, Osinniy, Viktor, Friestad, Kenneth, Søiland, Anne-Karin, Safir, Yakov, Skorupa, Wolgang, Tronstad, Ragnar, Nylandsted Larsen, Arne (2012) Assessing the role of iron-acceptor pairs in solar grade multicrystalline silicon wafers from the metallurgical route. physica status solidi (c), 9 (10). 2017-2022 doi:10.1002/pssc.201200258
Braley, Carole, Mazen, Frédéric, Papon, Anne-Marie, Charvet, Anne-Marie, Rieutord, François, Ntsoenzok, Esidor (2012) Fracture in (100)Si after high energy protons implantation. physica status solidi (c), 9 (10). 2023-2026 doi:10.1002/pssc.201200466
Li, Cheng, Huang, Shihao, Lu, Weifang, Xu, Jianfang, Huang, Wei, Sun, Zhijun, Lai, Hongkai, Chen, Songyan (2012) Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method. physica status solidi (c), 9 (10). 2027-2030 doi:10.1002/pssc.201200038
Dargis, Rytis, Arkun, Erdem F., Roucka, Radek, Smith, Robin, Williams, David, Clark, Andrew, Lebby, Michael (2012) Epitaxial Si, SiGe and Ge on binary and ternary rare earth oxide buffers. physica status solidi (c), 9 (10). 2031-2035 doi:10.1002/pssc.201200255
Benbahouche, Ly., Merabet, A., Zegadi, A. (2012) A detailed investigation on the failure mechanisms for IGBTs under successive short-circuit conditions. physica status solidi (c), 9 (10). 2036-2040 doi:10.1002/pssc.201200055
Chebaki, Elasaad, Djeffal, Fayçal, Bentrcia, Toufik (2012) Two-dimensional numerical analysis of nanoscale junctionless and conventional Double Gate MOSFETs including the effect of interfacial traps. physica status solidi (c), 9 (10). 2041-2044 doi:10.1002/pssc.201200128
Reichel, Denise, Skorupa, Wolfgang (2012) Precise millisecond annealing for advanced material processing. physica status solidi (c), 9 (10). 2045-2049 doi:10.1002/pssc.201200277
Fissel, Andreas, Krügener, Jan, Osten, H. Jörg (2012) Preparation of large step-free mesas on Si(111) by molecular beam epitaxy. physica status solidi (c), 9 (10). 2050-2053 doi:10.1002/pssc.201200139
Louro, P., Vieira, M., Vieira, M. A. (2012) Optical nonlinearity in tandem Si-C photodetectors. physica status solidi (c), 9 (10). 2054-2057 doi:10.1002/pssc.201200210
Tsunoda, Isao, Nakashima, Toshiyuki, Naka, Nobuyuki, Idemoto, Tatsuya, Yoneoka, Masashi, Takakura, Kenichiro, Yoshino, Kenji, Gonzalez, Mireia Bargallo, Simoen, Eddy, Claeys, Cor, Ohyama, Hidenori (2012) Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices. physica status solidi (c), 9 (10). 2058-2061 doi:10.1002/pssc.201200076
Ceccaroli, Bruno, Lohne, Otto, Øvrelid, Eivind J. (2012) New advances in polysilicon processes correlating feedstock properties and good crystal and wafer performances. physica status solidi (c), 9 (10). 2062-2070 doi:10.1002/pssc.201100167
Hiate, Taiga, Miyauchi, Naoto, Tang, Zeguo, Ishikawa, Ryo, Ueno, Keiji, Shirai, Hajime (2012) Retracted: Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells. physica status solidi (c), 9 (10). 2071-2074 doi:10.1002/pssc.201200129
Tang, Zeguo, Liu, Qiming, Khatri, Ishwor, Ishikawa, Ryo, Ueno, Keiji, Shirai, Hajime (2012) Optical properties and carrier transport in c-Si/conductive PEDOT:PSS(GO) composite heterojunctions. physica status solidi (c), 9 (10). 2075-2078 doi:10.1002/pssc.201200130
Becker, Christiane, Preidel, Veit, Sontheimer, Tobias, Klimm, Carola, Rudigier-Voigt, Eveline, Bockmeyer, Matthias, Rech, Bernd (2012) Direct growth of periodic silicon nanostructures on imprinted glass for photovoltaic and photonic applications. physica status solidi (c), 9 (10). 2079-2082 doi:10.1002/pssc.201200158
Gurevich, Yuri G., Velázquez-Pérez, Jesus E. (2012) Recombination process in solar cells: Impact on the carrier transport. physica status solidi (c), 9 (10). 2083-2087 doi:10.1002/pssc.201200170
Khalifa, M., Hajji, M., Ezzaouia, H. (2012) A novel and efficient method combining acid leaching and thermal annealing for impurities removal from silicon intended for photovoltaic application. physica status solidi (c), 9 (10). 2088-2091 doi:10.1002/pssc.201200214
De Moro, Fabrice, Focsa, Alexandru, Derbouz, Karim, Slaoui, Abdelilah, Auriac, Nicolas, Lignier, Hélène, Keller, Philipp (2012) Multicrystalline silicon solar cells from RST ribbon process. physica status solidi (c), 9 (10). 2092-2096 doi:10.1002/pssc.201200087
Cho, Young Joon, Chang, Hyo Sik (2012) Reduction of surface reflectivity in multi-crystalline silicon solar cells by wet nano-texturing. physica status solidi (c), 9 (10). 2097-2100 doi:10.1002/pssc.201200093
Liu, Qiming, Khatri, Ishwor, Ishikawa, Ryo, Ueno, Keiji, Shirai, Hajime (2012) Efficient crystalline Si/organic hybrid heterojunction solar cells. physica status solidi (c), 9 (10). 2101-2106 doi:10.1002/pssc.201200131
Peral, Ana, Lelièvre, Jean François, Recart, Federico, del Cañizo, Carlos (2012) Defect engineering during the contact co-firing step in an industrial belt furnace. physica status solidi (c), 9 (10). 2107-2110 doi:10.1002/pssc.201200166
Mohamed, Seifeddine Belhadj, Ben Rabha, Mohamed, Bessais, Brahim (2012) Double side multicrystalline silicon passivation by one step stain etching-based porous silicon. physica status solidi (c), 9 (10). 2111-2115 doi:10.1002/pssc.201200206
Bogdanowicz, J., Mertens, P. W., Cornagliotti, E., Wostyn, K., Penaud, J., Jaffrennou, P., Abric, E., Vandervorst, W. (2012) Non-destructive characterization of saw damage in silicon photovoltaics substrates by means of photomodulated optical reflectance. physica status solidi (c), 9 (10). 2116-2119 doi:10.1002/pssc.201200236
Laades, Abdelazize, Sperlich, Hans-Peter, Bähr, Mario, Stürzebecher, Uta, Diaz Alvarez, Carlos A., Burkhardt, Markus, Angermann, Heike, Blech, Michael, Lawerenz, Alexander (2012) On the impact of interfacial SiOx-layer on the passivation properties of PECVD synthesized aluminum oxide. physica status solidi (c), 9 (10). 2120-2123 doi:10.1002/pssc.201200244
Laades, Abdelazize, Burkhardt, Markus, Roczen, Maurizio, Klimm, Carola, Blech, Michael, Lawerenz, Alexander (2012) Detailed investigation of the structural and passivation properties of silicon oxynitrides for silicon solar cells. physica status solidi (c), 9 (10). 2124-2127 doi:10.1002/pssc.201200245
Zarroug, A., Dimassi, W., Ouertani, R., Ezzaouia, H. (2012) Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells. physica status solidi (c), 9 (10). 2128-2130 doi:10.1002/pssc.201200257
Crampette, Laurent, Poulain, Gilles, Cuminal, Yvan, Foucaran, Alain, Pellegrin, Yvon, Semmache, Bachir (2012) Phosphorous diffusion through silicon nitride thin film for selective emitter application. physica status solidi (c), 9 (10). 2131-2133 doi:10.1002/pssc.201200229
Khatri, Ishwor, Imamura, Takashi, Uehara, Akira, Ishikawa, Ryo, Ueno, Keiji, Shirai, Hajime (2012) Chemical mist deposition of graphene oxide and PEDOT:PSS films for crystalline Si/organic heterojunction solar cells. physica status solidi (c), 9 (10). 2134-2137 doi:10.1002/pssc.201200132
Normann, Hans B., Svensson, Bengt G., Monakhov, Edouard (2012) Formation of shallow front emitters for solar cells by rapid thermal processing. physica status solidi (c), 9 (10). 2138-2140 doi:10.1002/pssc.201200202
Janene, N., Hajjaji, A., Ben Rabha, M., El Khakani, M. A., Bessais, B., Gaidi, M. (2012) Influence of porous silicon passivation layer and TiO2coating on the optoelectronic properties of multicrystalline Si substrate. physica status solidi (c), 9 (10). 2141-2144 doi:10.1002/pssc.201200234
Kirner, Simon, Calnan, Sonya, Gabriel, Onno, Neubert, Sebastian, Zelt, Matthias, Stannowski, Bernd, Rech, Bernd, Schlatmann, Rutger (2012) An improved silicon-oxide-based intermediate-reflector for micromorph solar cells. physica status solidi (c), 9 (10). 2145-2148 doi:10.1002/pssc.201200243
Øvrelid, Eivind, Tangstad, Merete, Tranell, Gabriella, Lohne, Otto, Ceccaroli, Bruno (2012) New advances in metallurgical solar grade silicon based on recent Norwegian research activities. physica status solidi (c), 9 (10). 2149-2157 doi:10.1002/pssc.201200275
Moralejo, B., Tejero, A., Hortelano, V., Martínez, O., Jiménez, J., Parra, V. (2012) Electrical and optical characterization of extended defects in silicon mono-cast material. physica status solidi (c), 9 (10). 2158-2163 doi:10.1002/pssc.201200248
Ramos, Alba, del Cañizo, Carlos, Valdehita, Javier, Zamorano, Juan Carlos, Rodríguez, Araceli, Luque, Antonio (2012) Exploring polysilicon deposition conditions through a laboratory CVD prototype. physica status solidi (c), 9 (10). 2164-2168 doi:10.1002/pssc.201200161
Serra, João M. (2012) Silicon processing for photovoltaics based on incoherent radiation power. physica status solidi (c), 9 (10). 2169-2172 doi:10.1002/pssc.201200254
Kropman, Daniel, Dolgov, S. (2012) The effect of ultrasound on the Si-SiO2system. physica status solidi (c), 9 (10). 2173-2176 doi:10.1002/pssc.201200186
Ktifa, S., Ghrib, M., Saadallah, F., Yacoubi, N. (2012) Structural and optical properties of crystalline silicon thin films deposited on porous alumina. physica status solidi (c), 9 (10). 2177-2179 doi:10.1002/pssc.201200044
Ben Amor, Sana, Dimassi, Wissem, Ali Tebai, Mohamed, Ezzaouia, Hatem (2012) Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition. physica status solidi (c), 9 (10). 2180-2183 doi:10.1002/pssc.201200238
Sahiner, M. A., Hung, P. Y., Loh, W.-Y., Lysaght, P. S., Woicik, J. C., Guerrero, D. (2012) Local structural phase determination of Ni silicide thin films using EXAFS. physica status solidi (c), 9 (10). 2184-2188 doi:10.1002/pssc.201200250
Bousbih, Rabaa, Dimassi, Wissem, Haddadi, Ikbel, Ezzaouia, Hatem (2012) The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride. physica status solidi (c), 9 (10). 2189-2193 doi:10.1002/pssc.201200344
Ghannam, Moustafa Y., Raheem, Yaser Abdul, Alomar, Abdul Azeez, Poortmans, Jef (2012) Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen. physica status solidi (c), 9 (10). 2194-2197 doi:10.1002/pssc.201200181
de Calheiros Velozo, A., Lavareda, G., Nunes de Carvalho, C., Amaral, A. (2012) Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition. physica status solidi (c), 9 (10). 2198-2202 doi:10.1002/pssc.201200194
Alexandrova, Sashka, Szekeres, Anna, Valcheva, Evgenia (2012) Mechanical stress in silicon oxides grown on hydrogen implanted Si. physica status solidi (c), 9 (10). 2203-2206 doi:10.1002/pssc.201200235
An, Y.-T., Labbé, C., Morales, M., Marie, P., Gourbilleau, F. (2012) Fabrication and photoluminescence properties of Tb-doped nitrogen-rich silicon nitride films. physica status solidi (c), 9 (10). 2207-2210 doi:10.1002/pssc.201200253

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