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Tang, C. K., Vines, L., Svensson, B. G., Monakhov, E. V. (2012) Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon. physica status solidi (c), 9 (10). 1992-1995 doi:10.1002/pssc.201200163

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Reference TypeJournal (article/letter/editorial)
TitleDeep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon
Journalphysica status solidi (c)
AuthorsTang, C. K.Author
Vines, L.Author
Svensson, B. G.Author
Monakhov, E. V.Author
Year2012 (October)Volume9
Issue10
PublisherWiley
DOIdoi:10.1002/pssc.201200163Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5122040Long-form Identifiermindat:1:5:5122040:6
GUID0
Full ReferenceTang, C. K., Vines, L., Svensson, B. G., Monakhov, E. V. (2012) Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon. physica status solidi (c), 9 (10). 1992-1995 doi:10.1002/pssc.201200163
Plain TextTang, C. K., Vines, L., Svensson, B. G., Monakhov, E. V. (2012) Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon. physica status solidi (c), 9 (10). 1992-1995 doi:10.1002/pssc.201200163
In(2012, October) physica status solidi (c) Vol. 9 (10) Wiley

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Malmbekk, H., Vines, L., Monakhov, E. V., Svensson, B. G. (2011) Hydrogen-related defects in boron doped p-type silicon. physica status solidi (c), 8 (3). 705-708 doi:10.1002/pssc.201000260
Tang, C. K., Vines, L., Svensson, B. G., Monakhov, E. V. (2011) Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon. Applied Physics Letters, 99 (5). 52106pp. doi:10.1063/1.3619848
Tang, C. K., Lund, E., Monakhov, E. V., Mayandi, J., Holt, A., Svensson, B. G. (2011) Electrically active centers introduced in p-type Si by rapid thermal processing. physica status solidi (c), 8 (3). 725-728 doi:10.1002/pssc.201000263
Tang, C. K., Vines, L., Markevich, V. P., Svensson, B. G., Monakhov, E. V. (2013) Divacancy-iron complexes in silicon. Journal of Applied Physics, 113 (4). 44503pp. doi:10.1063/1.4788695
Normann, Hans B., Svensson, Bengt G., Monakhov, Edouard (2012) Formation of shallow front emitters for solar cells by rapid thermal processing. physica status solidi (c), 9 (10). 2138-2140 doi:10.1002/pssc.201200202
Johansen, K. M., Schifano, R., Monakhov, E. V., Svensson, B. G. (2008) Investigation of contact material for cross section scanning spreading resistance microscopy on zinc oxide. physica status solidi (c), 5 (10). 3361-3363 doi:10.1002/pssc.200778865
Lund, Esben, Galeckas, Augustinas, Monakhov, Edouard V., Svensson, Bengt G. (2012) Optical and electrical properties of reactively sputtered Ag2Cu2O3 films. physica status solidi (c), 9 (7). 1590-1592 doi:10.1002/pssc.201100644
Vines, L., Wong-Leung, J., Jagadish, C., Quemener, V., Monakhov, E. V., Svensson, B. G. (2012) Acceptor-like deep level defects in ion-implanted ZnO. Applied Physics Letters, 100 (21). 212106pp. doi:10.1063/1.4720514
Svensson, B. G., Monakhov, E.V., Alfieri, G., Mikelsen, M., Avset, B. S., Hallén, A. (2004) Defects and diffusion in high purity silicon for detector applications. physica status solidi (c), 1 (9). 2250-2257 doi:10.1002/pssc.200404847
Alfieri, G., Monakhov, E. V., Svensson, B. G., Linnarsson, M. K. (2005) Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide. Journal of Applied Physics, 98 (4). 43518pp. doi:10.1063/1.2009816
 
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