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Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2003) Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components. Journal of Applied Physics, 94 (2). 1218-1221 doi:10.1063/1.1582553

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Reference TypeJournal (article/letter/editorial)
TitleActivation energy analysis as a tool for extraction and investigation of p–n junction leakage current components
JournalJournal of Applied Physics
AuthorsCzerwinski, A.Author
Simoen, E.Author
Poyai, A.Author
Claeys, C.Author
Year2003 (July 15)Volume94
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1582553Search in ResearchGate
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Mindat Ref. ID5122285Long-form Identifiermindat:1:5:5122285:7
GUID0
Full ReferenceCzerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2003) Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components. Journal of Applied Physics, 94 (2). 1218-1221 doi:10.1063/1.1582553
Plain TextCzerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2003) Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components. Journal of Applied Physics, 94 (2). 1218-1221 doi:10.1063/1.1582553
In(2003, July) Journal of Applied Physics Vol. 94 (2) AIP Publishing

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Poyai, A., Simoen, E., Claeys, C., Czerwinski, A., Gaubas, E. (2001) Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes. Applied Physics Letters, 78 (14). 1997-1999 doi:10.1063/1.1359487
Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2000) Peripheral current analysis of silicon p–n junction and gated diodes. Journal of Applied Physics, 88 (11). 6506-6514 doi:10.1063/1.1324691
Czerwinski, A., Simoen, E., Poyai, A., Claeys, C., Ohyama, H. (2003) Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions. IEEE Transactions on Nuclear Science, 50 (2) 278-287 doi:10.1109/tns.2003.809469
Czerwinski, A., Simoen, E., Claeys, C. (1998) p-n junction peripheral current analysis using gated diode measurements. Applied Physics Letters, 72 (26). 3503-3505 doi:10.1063/1.121641
Simoen, E., Claeys, C., Czerwinski, A., Katcki, J. (1998) Accurate extraction of the diffusion current in silicon p-n junction diodes. Applied Physics Letters, 72 (9). 1054-1056 doi:10.1063/1.120962
Poyai, A., Simoen, E., Claeys, C. (1999) Current transients in almost-ideal Czochralski silicon p–n junction diodes. Applied Physics Letters, 75 (21). 3342-3344 doi:10.1063/1.125345
Czerwinski, A., Ka̧tcki, J., Ratajczak, J., Simoen, E., Poyai, A., Claeys, C., Ohyama, H. (2002) Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186 (1). 166-170 doi:10.1016/s0168-583x(01)00864-3
Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2004) Local Electric Fields in Silicided Shallow Junctions. Journal of the Electrochemical Society, 151. doi:10.1149/1.1772783
Poyai, A., Simoen, E., Claeys, C. (2001) Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well. Applied Physics Letters, 78 (7). 949-951 doi:10.1063/1.1342041
Poyai, A., Claeys, C., Simôen, E. (2002) Improved extraction of carrier concentration and depletion width from capacitance–voltage characteristics of silicon n+–p-well junction diodes. Applied Physics Letters, 80 (7). 1192-1194 doi:10.1063/1.1435809
Poyai, A., Simoen, E., Claeys, C., Rooyackers, R. (2003) Diode Analysis of Advanced Processing Modules for Deep-Submicrometer CMOS Technology Nodes. Journal of the Electrochemical Society, 150. doi:10.1149/1.1623496
 
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