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Poyai, A., Simoen, E., Claeys, C. (1999) Current transients in almost-ideal Czochralski silicon p–n junction diodes. Applied Physics Letters, 75 (21). 3342-3344 doi:10.1063/1.125345

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Reference TypeJournal (article/letter/editorial)
TitleCurrent transients in almost-ideal Czochralski silicon p–n junction diodes
JournalApplied Physics Letters
AuthorsPoyai, A.Author
Simoen, E.Author
Claeys, C.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125345Search in ResearchGate
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Mindat Ref. ID8525077Long-form Identifiermindat:1:5:8525077:6
GUID0
Full ReferencePoyai, A., Simoen, E., Claeys, C. (1999) Current transients in almost-ideal Czochralski silicon p–n junction diodes. Applied Physics Letters, 75 (21). 3342-3344 doi:10.1063/1.125345
Plain TextPoyai, A., Simoen, E., Claeys, C. (1999) Current transients in almost-ideal Czochralski silicon p–n junction diodes. Applied Physics Letters, 75 (21). 3342-3344 doi:10.1063/1.125345
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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Poyai, A., Simoen, E., Claeys, C., Czerwinski, A., Gaubas, E. (2001) Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes. Applied Physics Letters, 78 (14). 1997-1999 doi:10.1063/1.1359487
Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2000) Peripheral current analysis of silicon p–n junction and gated diodes. Journal of Applied Physics, 88 (11). 6506-6514 doi:10.1063/1.1324691
Simoen, E., Claeys, C., Czerwinski, A., Katcki, J. (1998) Accurate extraction of the diffusion current in silicon p-n junction diodes. Applied Physics Letters, 72 (9). 1054-1056 doi:10.1063/1.120962
Poyai, A., Simoen, E., Claeys, C. (2001) Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well. Applied Physics Letters, 78 (7). 949-951 doi:10.1063/1.1342041
Simoen, E., Vanhellemont, J., Dubuc, J. P., Claeys, C., Ohyama, H. (1996) High energy particle irradiation effects on the low‐frequency noise of Czochralski silicon junction diodes. Applied Physics Letters, 68 (6). 788-790 doi:10.1063/1.116533
Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. (2003) Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components. Journal of Applied Physics, 94 (2). 1218-1221 doi:10.1063/1.1582553
Poyai, A., Claeys, C., Simôen, E. (2002) Improved extraction of carrier concentration and depletion width from capacitance–voltage characteristics of silicon n+–p-well junction diodes. Applied Physics Letters, 80 (7). 1192-1194 doi:10.1063/1.1435809
Simoen, E., Bosman, G., Vanhellemont, J., Claeys, C. (1995) Impact of the substrate on the low‐frequency noise of silicon n+p junction diodes. Applied Physics Letters, 66 (19). 2507-2509 doi:10.1063/1.113149
Czerwinski, A., Simoen, E., Claeys, C. (1998) p-n junction peripheral current analysis using gated diode measurements. Applied Physics Letters, 72 (26). 3503-3505 doi:10.1063/1.121641
Simoen, E., Claeys, C., Neimash, V. B., Kraitchinskii, A., Krasko, N., Puzenko, O., Blondeel, A., Clauws, P. (2000) Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon. Applied Physics Letters, 76 (20). 2838-2840 doi:10.1063/1.126490
Simoen, E., Vanhellemont, J., Claeys, C. (1996) Effective generation‐recombination parameters in high‐energy proton irradiated silicon diodes. Applied Physics Letters, 69 (19). 2858-2860 doi:10.1063/1.117342
 
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