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Yano, R., Hirayama, Y., Miyashita, S., Uesugi, N., Uehara, S. (2003) Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump–probe spectroscopy. Journal of Applied Physics, 94 (6). 3966-3971 doi:10.1063/1.1602569

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Reference TypeJournal (article/letter/editorial)
TitleArsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump–probe spectroscopy
JournalJournal of Applied Physics
AuthorsYano, R.Author
Hirayama, Y.Author
Miyashita, S.Author
Uesugi, N.Author
Uehara, S.Author
Year2003 (September 15)Volume94
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1602569Search in ResearchGate
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Mindat Ref. ID5123207Long-form Identifiermindat:1:5:5123207:6
GUID0
Full ReferenceYano, R., Hirayama, Y., Miyashita, S., Uesugi, N., Uehara, S. (2003) Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump–probe spectroscopy. Journal of Applied Physics, 94 (6). 3966-3971 doi:10.1063/1.1602569
Plain TextYano, R., Hirayama, Y., Miyashita, S., Uesugi, N., Uehara, S. (2003) Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump–probe spectroscopy. Journal of Applied Physics, 94 (6). 3966-3971 doi:10.1063/1.1602569
In(2003, September) Journal of Applied Physics Vol. 94 (6) AIP Publishing

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Yano, Ryuzi, Hirayama, Yoshiro, Miyashita, Sen, Sasabu, Hiroyuki, Uesugi, Naoshi, Uehara, Shingo (2001) Pump–probe spectroscopy of low-temperature grown GaAs for carrier lifetime estimation: arsenic pressure dependence of carrier lifetime during MBE crystal growth. Physics Letters A, 289. 93-98 doi:10.1016/s0375-9601(01)00591-6
Yano, R., Gotoh, H., Hirayama, Y., Miyashita, S. (2004) Systematic pump-probe terahertz wave emission spectroscopy of a photoconductive antenna fabricated on low-temperature grown GaAs. Journal of Applied Physics, 96 (7). 3635-3638 doi:10.1063/1.1786667
Němec, H., Pashkin, A., Kužel, P., Khazan, M., Schnüll, S., Wilke, I. (2001) Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy. Journal of Applied Physics, 90 (3). 1303-1306 doi:10.1063/1.1380414
Prabhu, S. S., Ralph, S. E., Melloch, M. R., Harmon, E. S. (1997) Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy. Applied Physics Letters, 70 (18). 2419-2421 doi:10.1063/1.118890
Stellmacher, M., Nagle, J., Lampin, J. F., Santoro, P., Vaneecloo, J., Alexandrou, A. (2000) Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions. Journal of Applied Physics, 88 (10). 6026-6031 doi:10.1063/1.1285829
Kladis, D. I., Euthymiou, P. C. (1974) Temperature dependence of minority‐carrier lifetime in low‐resistivity GaAs. Journal of Applied Physics, 45 (6). 2775-2776 doi:10.1063/1.1663666
Tonouchi, Masayoshi, Kawasaki, Naohiro, Yoshimura, Takahiro, Wald, Hagen, Seidel, Paul (2002) Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l706
Smith, P. W. E, Benjamin, S. D., Loka, H. S. (1997) Tailoring of trap-related carrier dynamics in low-temperature-grown GaAs. Applied Physics Letters, 71 (9). 1156-1158 doi:10.1063/1.119852
Bhattacharya, R. S., Pronko, P. P., Ling, S. C. (1982) Low‐temperature annealing behavior of Se‐implanted GaAs studied by high resolution Rutherford backscattering channeling. Journal of Applied Physics, 53 (3). 1804-1806 doi:10.1063/1.330681
Yano, R., Gotoh, H., Hirayama, Y., Miyashita, S., Kadoya, Y., Kusuda, K., Yamanishi, M. (2004) Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs surface with increased excitation intensity. Journal of Applied Physics, 95 (4). 2141-2145 doi:10.1063/1.1642733
Wells, Nathan P., Belden, Paul M., Demers, Joseph R., Lotshaw, William T. (2014) Transient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for low-temperature grown GaAs. Journal of Applied Physics, 116 (7). 73506pp. doi:10.1063/1.4892868
 
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