Reference Type | Journal (article/letter/editorial) |
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Title | Transient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for low-temperature grown GaAs |
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Journal | Journal of Applied Physics |
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Authors | Wells, Nathan P. | Author |
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Belden, Paul M. | Author |
Demers, Joseph R. | Author |
Lotshaw, William T. | Author |
Year | 2014 (August 21) | Volume | 116 |
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Issue | 7 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.4892868Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5200245 | Long-form Identifier | mindat:1:5:5200245:4 |
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GUID | 0 |
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Full Reference | Wells, Nathan P., Belden, Paul M., Demers, Joseph R., Lotshaw, William T. (2014) Transient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for low-temperature grown GaAs. Journal of Applied Physics, 116 (7). 73506pp. doi:10.1063/1.4892868 |
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Plain Text | Wells, Nathan P., Belden, Paul M., Demers, Joseph R., Lotshaw, William T. (2014) Transient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for low-temperature grown GaAs. Journal of Applied Physics, 116 (7). 73506pp. doi:10.1063/1.4892868 |
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In | (2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing |
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