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Wells, Nathan P., Driskell, Travis U., Hudson, Andrew I., LaLumondiere, Stephen D., Lotshaw, William T., Forbes, David V., Hubbard, Seth M. (2015) Carrier quenching in InGaP/GaAs double heterostructures. Journal of Applied Physics, 118 (6). 65703pp. doi:10.1063/1.4927847

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Reference TypeJournal (article/letter/editorial)
TitleCarrier quenching in InGaP/GaAs double heterostructures
JournalJournal of Applied Physics
AuthorsWells, Nathan P.Author
Driskell, Travis U.Author
Hudson, Andrew I.Author
LaLumondiere, Stephen D.Author
Lotshaw, William T.Author
Forbes, David V.Author
Hubbard, Seth M.Author
Year2015 (August 14)Volume118
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4927847Search in ResearchGate
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Mindat Ref. ID5203624Long-form Identifiermindat:1:5:5203624:8
GUID0
Full ReferenceWells, Nathan P., Driskell, Travis U., Hudson, Andrew I., LaLumondiere, Stephen D., Lotshaw, William T., Forbes, David V., Hubbard, Seth M. (2015) Carrier quenching in InGaP/GaAs double heterostructures. Journal of Applied Physics, 118 (6). 65703pp. doi:10.1063/1.4927847
Plain TextWells, Nathan P., Driskell, Travis U., Hudson, Andrew I., LaLumondiere, Stephen D., Lotshaw, William T., Forbes, David V., Hubbard, Seth M. (2015) Carrier quenching in InGaP/GaAs double heterostructures. Journal of Applied Physics, 118 (6). 65703pp. doi:10.1063/1.4927847
In(2015, August) Journal of Applied Physics Vol. 118 (6) AIP Publishing

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Hudson, Andrew, Hubbard, Seth, Juang, Bor-Chau, Liang, Baolai, Debnath, Mukul, Lotshaw, William (2022) Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures. Journal of Applied Physics, 131 (7) 75703pp. doi:10.1063/5.0076752
Cardoza, David, LaLumondiere, Stephen D., Wells, Nathan P., Tockstein, Michael A., Brewe, Dale L., Lotshaw, William T., Moss, Steven C. (2015) Investigating Pulsed X-ray Induced SEE in Analog Microelectronic Devices. IEEE Transactions on Nuclear Science, 62 (6) 2458-2467 doi:10.1109/tns.2015.2498100
Wells, Nathan P., Belden, Paul M., Demers, Joseph R., Lotshaw, William T. (2014) Transient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for low-temperature grown GaAs. Journal of Applied Physics, 116 (7). 73506pp. doi:10.1063/1.4892868
Cardoza, David, LaLumondiere, Stephen D., Tockstein, Michael A., Brewe, Dale L., Wells, Nathan P., Koga, Rokutaro, Gaab, Kevin M., Lotshaw, William T., Moss, Steven C. (2014) Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions. IEEE Transactions on Nuclear Science, 61 (6) 3154-3162 doi:10.1109/tns.2014.2368057
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Bailey, Christopher G., Forbes, David V., Raffaelle, Ryne P., Hubbard, Seth M. (2011) Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells. Applied Physics Letters, 98 (16). 163105pp. doi:10.1063/1.3580765
Driscoll, Kristina, Bennett, Mitchell F., Polly, Stephen J., Forbes, David V., Hubbard, Seth M. (2014) Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells. Applied Physics Letters, 104 (2). 23119pp. doi:10.1063/1.4862028
Polly, Stephen J., Hellstroem, Staffan, Slocum, Michael A., Bittner, Zachary S., Forbes, David V., Roland, Paul J., Ellingson, Randy J., Hubbard, Seth M. (2017) Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells. Journal of Applied Physics, 121 (1). 13101pp. doi:10.1063/1.4972958
Pickin, William, David, J. P. R. (1990) Carrier decay in GaAs quantum wells. Applied Physics Letters, 56 (3). 268-270 doi:10.1063/1.102805
Schmieder, Kenneth J., Hubbard, Seth M., Forbes, David V., Warner, Jeffrey H., Walters, Robert J. (2016) Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots. Journal of Applied Physics, 119 (18). 185702pp. doi:10.1063/1.4949476
Bailey, Christopher G., Hubbard, Seth M., Forbes, David V., Raffaelle, Ryne P. (2009) Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence. Applied Physics Letters, 95 (20). 203110pp. doi:10.1063/1.3264967
 
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