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De Waard, H., Kemerink, G.J. (1983) Hyperfine interaction and channeling studies of impurities implanted in silicon. Physica B+C, 116 (1). 210-218 doi:10.1016/0378-4363(83)90249-8

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Reference TypeJournal (article/letter/editorial)
TitleHyperfine interaction and channeling studies of impurities implanted in silicon
JournalPhysica B+C
AuthorsDe Waard, H.Author
Kemerink, G.J.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90249-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5132184Long-form Identifiermindat:1:5:5132184:8
GUID0
Full ReferenceDe Waard, H., Kemerink, G.J. (1983) Hyperfine interaction and channeling studies of impurities implanted in silicon. Physica B+C, 116 (1). 210-218 doi:10.1016/0378-4363(83)90249-8
Plain TextDe Waard, H., Kemerink, G.J. (1983) Hyperfine interaction and channeling studies of impurities implanted in silicon. Physica B+C, 116 (1). 210-218 doi:10.1016/0378-4363(83)90249-8
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Kimerling, L.C. (1983) Defects in semiconductors - 1982. Physica B+C, 116 (1). 1-3 doi:10.1016/0378-4363(83)90218-8
Viegers, M.P.A., Bulle-Lieuwma, C.W.T., Bartels, W.J. (1983) Overcompensation of misfit strain by dislocation networks in phosphorus implanted (001) silicon. Physica B+C, 116 (1). 612-615 doi:10.1016/0378-4363(83)90315-7
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