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(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Reference TypeJournal (issue)
JournalPhysica B+C
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
Mindat Ref. ID5132114Long-form Identifiermindat:1:5:5132114:9
GUID0
Full Reference(1983, February) Physica B+C Vol. 116 (1) Elsevier BV
Plain Text(1983, February) Physica B+C Vol. 116 (1) Elsevier BV
In(1983) Physica B+C Vol. 116. Elsevier BV

Contains

(1983) Editorial Board. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90215-2
Ammerlaan, C.A.J. (1983) Preface. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90216-4
(1983) Conference committees and sponsors. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90217-6
Kimerling, L.C. (1983) Defects in semiconductors - 1982. Physica B+C, 116 (1). 1-3 doi:10.1016/0378-4363(83)90218-8
Toyozawa, Y. (1983) Electron induced lattice relaxations and defect reactions. Physica B+C, 116 (1). 7-17 doi:10.1016/0378-4363(83)90219-x
Pantelides, S.T., Ivanov, I., Scheffler, M., Vigneron, J.P. (1983) Multivacancies, interstitials, and self-interstitial migration in silicon. Physica B+C, 116 (1). 18-27 doi:10.1016/0378-4363(83)90220-6
Watkins, G.D., Deleo, G.G., Fowler, W.B. (1983) Theory defects in silicon: Recent calculations using finite molecular clusters. Physica B+C, 116 (1). 28-38 doi:10.1016/0378-4363(83)90221-8
Sumi, H. (1983) Carrier-density dependence of dynamic multiphonon nonradiative recombination through deep levels in semiconductors. Physica B+C, 116 (1). 39-44 doi:10.1016/0378-4363(83)90222-x
Markvart, T. (1983) Enhancement of defect reactions by tunnelling between defect potential curves. Physica B+C, 116 (1). 45-51 doi:10.1016/0378-4363(83)90223-1
Kunc, K. (1983) Local force variations caused by isoelectric impurities: Method of determination from first principles. Physica B+C, 116 (1). 52-57 doi:10.1016/0378-4363(83)90224-3
Zigone, M., Vandevyver, M., Talwar, D.N. (1983) Trend in the local-force variations due to substitutional transition-metal impurities in ZnS. Physica B+C, 116 (1). 58-62 doi:10.1016/0378-4363(83)90225-5
Lannoo, M. (1983) A classification of the distortion symmetries near vacancies in zinc blende semiconductors. Physica B+C, 116 (1). 63-65 doi:10.1016/0378-4363(83)90226-7
Davies, G. (1983) Distorted defects in silicon and diamond. Physica B+C, 116 (1). 66-71 doi:10.1016/0378-4363(83)90227-9
Jones, R., King, T. (1983) Calculation of local density of states at defects in diamond and silicon. Physica B+C, 116 (1). 72-75 doi:10.1016/0378-4363(83)90228-0
Baraff, G.A., Schluter, M., Allan, G. (1983) Calculation of Si and Al interstitials in silicon using the cluster-extended Green's function technique. Physica B+C, 116 (1). 76-78 doi:10.1016/0378-4363(83)90229-2
Kirton, M.J., Jaros, M., Brand, S. (1983) The electronic properties of dangling bonds in silicon. Physica B+C, 116 (1). 79-84 doi:10.1016/0378-4363(83)90230-9
Lannoo, M., Bourgoin, J.C. (1983) A reexamination of the g tensor for defects with dangling bonds in silicon. Physica B+C, 116 (1). 85-89 doi:10.1016/0378-4363(83)90231-0
Fazzio, A., Leite, J.R., Caldas, M.J. (1983) A molecular cluster study of complex defects in Si: The divacancy and the E center. Physica B+C, 116 (1). 90-94 doi:10.1016/0378-4363(83)90232-2
Mathiot, D., Pfister, J.C. (1983) On the diffusion of donors into silicon: High concentration and nonequilibrium defect effects. Physica B+C, 116 (1). 95-100 doi:10.1016/0378-4363(83)90233-4
Mainwood, A., Stoneham, A.M. (1983) Interstitial muons and hydrogen in crystalline silicon. Physica B+C, 116 (1). 101-105 doi:10.1016/0378-4363(83)90234-6
Caldas, M.J., Leite, J.R., Fazzio, A. (1983) Electronic structure of oxygen in silicon. Physica B+C, 116 (1). 106-111 doi:10.1016/0378-4363(83)90235-8
Pecheur, P., Toussaint, G. (1983) Tight binding study of transition ions in silicon and E.P.R. spectra. Physica B+C, 116 (1). 112-115 doi:10.1016/0378-4363(83)90236-x
Hemstreet, L.A. (1983) Electronic states of selected deep level defects in III–V semiconductors. Physica B+C, 116 (1). 116-120 doi:10.1016/0378-4363(83)90237-1
Van Der Rest, J., Pecheur, P. (1983) Electronic density of states of ideal vacancies and anti-structure defects in GaAs. Physica B+C, 116 (1). 121-126 doi:10.1016/0378-4363(83)90238-3
Antoncik, E., Gu, B.L. (1983) Internal electronic configuration of Sn donors and acceptors in AIIIBV compounds. Physica B+C, 116 (1). 127-130 doi:10.1016/0378-4363(83)90239-5
Morgan, T.N. (1983) The electronic states of oxygen in gallium phosphide an example of weak bonding. Physica B+C, 116 (1). 131-138 doi:10.1016/0378-4363(83)90240-1
Abe, T., Harada, H., Chikawa, J. (1983) Swirl defects in float-zoned silicon crystals. Physica B+C, 116 (1). 139-147 doi:10.1016/0378-4363(83)90241-3
Claeys, C., Bender, H., Declerck, G., Van Landuyt, J., Van Overstraeten, R., Amelinckx, S. (1983) Impact of high temperature processing on bulk defects in czochralski silicon. Physica B+C, 116 (1). 148-161 doi:10.1016/0378-4363(83)90242-5
Richter, H., Mai, M., Kirscht, F-G., Gaworzewski, P. (1983) Defect engineering as an important factor in developing VLSI substrates. Physica B+C, 116 (1). 162-167 doi:10.1016/0378-4363(83)90243-7
Rodot, H., Guillaume, J.C., Chevallier, J., Boulou, M., Kriapov, V.T., Kashimov, F.R., Markova, T.I., Zoubridski, I.A. (1983) Defects in gallium arsenide grown from solution under microgravity conditions. Physica B+C, 116 (1). 168-176 doi:10.1016/0378-4363(83)90244-9
Moss, D.J., Young, J.F., Van Driel, H.M., Vermeulen, L.A. (1983) Time resolved donor-acceptor and acceptor-valence band recombination in semiconducting diamond. Physica B+C, 116 (1). 177-182 doi:10.1016/0378-4363(83)90245-0
Flint, I.T., Lomer, J.N. (1983) The formation of the E.S.R. centres A-2 and A-3 in diamond electron irradiated below 30K and an interpretation in terms of self di-interstitial complexes. Physica B+C, 116 (1). 183-186 doi:10.1016/0378-4363(83)90246-2
Gippius, A.A., Vavilov, V.S., Zaitsev, A.M., Zhakupbekov, B.S. (1983) Defects production and interaction in ion-implanted diamond. Physica B+C, 116 (1). 187-194 doi:10.1016/0378-4363(83)90247-4
Sauer, R., Weber, J. (1983) Photoluminescence characterization of deep defects in silicon. Physica B+C, 116 (1). 195-209 doi:10.1016/0378-4363(83)90248-6
De Waard, H., Kemerink, G.J. (1983) Hyperfine interaction and channeling studies of impurities implanted in silicon. Physica B+C, 116 (1). 210-218 doi:10.1016/0378-4363(83)90249-8
Newton, J.L., Chatterjee, A.P., Harris, R.D., Watkins, G.D. (1983) Negative-U properties of the lattice vacancy in silicon. Physica B+C, 116 (1). 219-223 doi:10.1016/0378-4363(83)90250-4
Sprenger, M., Muller, S.H., Ammerlaan, C.A.J. (1983) The negatively charged vacancy in silicon: Hyperfine interactions from endor measurements. Physica B+C, 116 (1). 224-229 doi:10.1016/0378-4363(83)90251-6
Oehrlein, G.S., Lindström, J.L., Krafcsik, I., Jaworowski, A.E., Corbett, J.W. (1983) A quantitative investigation of divacancy production enhancement by interstitial oxygen in electron-irradiated silicon. Physica B+C, 116 (1). 230-235 doi:10.1016/0378-4363(83)90252-8
Bagraev, N.T. (1983) Electron localization on defects and optical nuclear polarization in disordered and semimagnetic semiconductors. Physica B+C, 116 (1). 236-243 doi:10.1016/0378-4363(83)90253-x
Keller, W., Pensl, G., Schulz, M. (1983) Experimental study of the Poole-Frenkel effect on the Si:Tl acceptor. Physica B+C, 116 (1). 244-251 doi:10.1016/0378-4363(83)90254-1
Thonke, K., Weber, J., Wagner, J., Sauer, R. (1983) Origin of the 1.080 eV (I2) photolumiscence line in irradiated silicon. Physica B+C, 116 (1). 252-257 doi:10.1016/0378-4363(83)90255-3
O'Donnell, K.P., Lee, K.M., Watkins, G.D. (1983) Origin of the 0.97 eV luminescence in irradiated silicon. Physica B+C, 116 (1). 258-263 doi:10.1016/0378-4363(83)90256-5
Newman, R.C., Binns, M.J., Brown, W.P., Livingston, F.M., Messoloras, S., Stewart, R.J., Wilkes, J.G. (1983) Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle size. Physica B+C, 116 (1). 264-270 doi:10.1016/0378-4363(83)90257-7
Benton, J.L., Kimerling, L.C., Stavola, M. (1983) The oxygen related donor effect in silicon. Physica B+C, 116 (1). 271-275 doi:10.1016/0378-4363(83)90258-9
Foy, C.P. (1983) Optical studies of vibronic bands in silicon. Physica B+C, 116 (1). 276-280 doi:10.1016/0378-4363(83)90259-0
Vlasenko, L.S. (1983) Excited triplet states of defects and optical nuclear polarization in silicon. Physica B+C, 116 (1). 281-286 doi:10.1016/0378-4363(83)90260-7
Jaworowski, A.E., Oehrlein, G.S., Corbett, J.W. (1983) Electron irradiation effects in edge-defined film-fed growth ribbon silicon. Physica B+C, 116 (1). 287-290 doi:10.1016/0378-4363(83)90261-9
Conzelmann, H., Weber, J. (1983) Photoluminescence from chromium-boron pairs in silicon. Physica B+C, 116 (1). 291-296 doi:10.1016/0378-4363(83)90262-0
Kimerling, L.C., Benton, J.L. (1983) Electronically controlled reactions of interstitial iron in silicon. Physica B+C, 116 (1). 297-300 doi:10.1016/0378-4363(83)90263-2
Wünstel, K., Froehner, K.-H., Wagner, P. (1983) Iron-related defects in silicon. Physica B+C, 116 (1). 301-305 doi:10.1016/0378-4363(83)90264-4
Schirmer, O.F. (1983) ESR of Fe-S pairs in silicon. Physica B+C, 116 (1). 306-311 doi:10.1016/0378-4363(83)90265-6
Bergholz, W. (1983) Pairing reactions of interstitial cobalt and shallow acceptors in silicon observed in Mössbauer spectroscopy. Physica B+C, 116 (1). 312-317 doi:10.1016/0378-4363(83)90266-8
Scheibe, E., Schröter, W. (1983) Investigations in cobalt doped silicon by DLTS and Mössbauer effect. Physica B+C, 116 (1). 318-322 doi:10.1016/0378-4363(83)90267-x
Kitagawa, H., Hashimoto, K., Yoshida, M. (1983) Point defects in silicon studied by nickel diffusion. Physica B+C, 116 (1). 323-327 doi:10.1016/0378-4363(83)90268-1
Iwami, H., Tromp, R.M., Van Loenen, E.J., Saris, F.W. (1983) Enhancement of damage creation at metal-silicon interfaces during H+ and He+ irradiation. Physica B+C, 116 (1). 328-331 doi:10.1016/0378-4363(83)90269-3
Henning, J.C.M. (1983) The structure of the Pt-center in silicon. Physica B+C, 116 (1). 332-334 doi:10.1016/0378-4363(83)90270-x
Stolwijk, N.A., Schuster, B., Hölzl, J., Mehrer, H., Frank, W. (1983) Diffusion and solubility of gold in silicon. Physica B+C, 116 (1). 335-342 doi:10.1016/0378-4363(83)90271-1
Fukuoka, N., Saito, H. (1983) The hole trapping defects in irradiated germanium as studied by DLTS. Physica B+C, 116 (1). 343-348 doi:10.1016/0378-4363(83)90272-3
Haller, E.E., McMurray, R.E. (1983) Two novel acceptors in ultra-pure germanium: Nature and interconversion. Physica B+C, 116 (1). 349-353 doi:10.1016/0378-4363(83)90273-5
Döring, K.-P., Haas, N., Haller, E.E., Herlach, D., Jacobs, W., Krauth, M., Orth, H., Rosenkranz, J., Seeger, A., Vetter, J., Arnold, K.-P., Aurenz, Th., Bossy, H. (1983) Muonium in ultra-pure germanium. Physica B+C, 116 (1). 354-360 doi:10.1016/0378-4363(83)90274-7
Konopleva, R.F., Evseev, V.A., Borisov, B.A., Nazarkin, I.V., Chekanov, V.A. (1983) Using reactor-neutron compensated germanium crystals to simulate the properties of amorphous semiconductors. Physica B+C, 116 (1). 361-370 doi:10.1016/0378-4363(83)90275-9
Martin, G.M., Makram-Ebeid, S. (1983) Manifestations of deep levels point defects in GaAs. Physica B+C, 116 (1). 371-383 doi:10.1016/0378-4363(83)90276-0
Kouimtzi, S.D. (1983) Low temperature electron damage studies in n-type GaAs. Physica B+C, 116 (1). 384-387 doi:10.1016/0378-4363(83)90277-2
Pons, D. (1983) Anisotropic defect introduction in n and p-GaAs by electron irradiation. Physica B+C, 116 (1). 388-393 doi:10.1016/0378-4363(83)90278-4
Stievenard, D., Bourgoin, J.C., Pons, D. (1983) Defects introduced by high temperature electron irradiation in n-GaAs. Physica B+C, 116 (1). 394-397 doi:10.1016/0378-4363(83)90279-6
Weber, E.R., Schneider, J. (1983) AsGa antisite defects in GaAs. Physica B+C, 116 (1). 398-403 doi:10.1016/0378-4363(83)90280-2
Tajima, M., Okada, Y. (1983) Characterization of deep levels in LEC GaAs crystals by the photoluminescence technique. Physica B+C, 116 (1). 404-408 doi:10.1016/0378-4363(83)90281-4
Picoli, G., Deveaud, B., Lambert, B. (1983) Chromium in trigonal site in GaAs. Physica B+C, 116 (1). 409-413 doi:10.1016/0378-4363(83)90282-6
Pomrenke, G.S., Park, Y.S., Hengehold, R.L., Maclin, M.T. (1983) Luminescence characteristics of the 1.4 eV silicon related complex in gallium arsenide. Physica B+C, 116 (1). 414-419 doi:10.1016/0378-4363(83)90283-8
Frank, W., Gösele, U. (1983) A unifying interpretation of dark line defects in GaAs and bright dislocation halos in GaP. Physica B+C, 116 (1). 420-424 doi:10.1016/0378-4363(83)90284-x
Killoran, N., Cavenett, B.C., Godlewski, M., Kennedy, T.A., Wilsey, N.D. (1983) Spin dependent formation and decay of the triplet antisite centre in GaP. Physica B+C, 116 (1). 425-430 doi:10.1016/0378-4363(83)90285-1
Mooney, P.M., Kennedy, T.A., Small, M.B. (1983) Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP. Physica B+C, 116 (1). 431-435 doi:10.1016/0378-4363(83)90286-3
Ferenczi, G., Pavelka, T., Somogyi, M. (1983) Identification of a deep electron trap in GaP:N. Physica B+C, 116 (1). 436-443 doi:10.1016/0378-4363(83)90287-5
Shanabrook, B.V., Klein, P.B., Bishop, S.G. (1983) Photoluminescence excitation spectroscopy of Fe-doped GaP. Physica B+C, 116 (1). 444-448 doi:10.1016/0378-4363(83)90288-7
Rao, E.V.K., Sibille, A., Duhamel, N. (1983) Investigation of process-induced defects in InP. Physica B+C, 116 (1). 449-455 doi:10.1016/0378-4363(83)90289-9
Barrau, J., Thanh, Do Xuan, Brousseau, M., Brabant, J.C., Voillot, F. (1983) The zero-phonon luminescence from Cr2+ in InP. Physica B+C, 116 (1). 456-460 doi:10.1016/0378-4363(83)90290-5
Yuba, Y., Judai, Y., Gamo, K., Namba, S. (1983) OTCS study of defect state in Fe-doped semi-insulating InP induced by ion irradiation and thermal annealing. Physica B+C, 116 (1). 461-466 doi:10.1016/0378-4363(83)90291-7
Lambert, B., Deveaud, B., Toudic, Y., Clerjaud, B. (1983) Electron paramagnetic resonance of InP:Co2+. Physica B+C, 116 (1). 467-469 doi:10.1016/0378-4363(83)90292-9
Weyer, G., Petersen, J.W., Damgaard, S. (1983) The electronic configuration of amphoteric Sn dopants in III–V compound semiconductors. Physica B+C, 116 (1). 470-473 doi:10.1016/0378-4363(83)90293-0
Loualiche, S., Nouailhat, A., Guillot, G. (1983) Optical ionization cross sections of the traps created in 1 MeV electron irradiated n-type Ga1-xAlxAs. Physica B+C, 116 (1). 474-478 doi:10.1016/0378-4363(83)90294-2
Wada, T., Sakurai, K. (1983) 20KeV electron-beam annealing of defects in GaAsP during SEM measurement. Physica B+C, 116 (1). 479-486 doi:10.1016/0378-4363(83)90295-4
Fitzpatrick, B., Neumark, G., Bhargava, R., Vermaak, J. (1983) Structural defects and p-type conductivity in ZnSe. Physica B+C, 116 (1). 487-491 doi:10.1016/0378-4363(83)90296-6
West, C., Robbins, D.J., Dean, P.J., Hayes, W. (1983) The luminescence of copper in zinc oxide. Physica B+C, 116 (1). 492-499 doi:10.1016/0378-4363(83)90297-8
Clerjaud, B., Gelineau, A., Gendron, F., Porte, C., Baranowski, J.M., Liro, Z. (1983) Optical properties of Ni+(d9) in ZnS. Physica B+C, 116 (1). 500-502 doi:10.1016/0378-4363(83)90298-x
Taguchi, T., Yokogawa, T., Fujita, S., Satoh, M., Inuishi, Y. (1983) Defect creation and doping of p-type impurities in ZnS crystals. Physica B+C, 116 (1). 503-507 doi:10.1016/0378-4363(83)90299-1
Dean, P.J., Pitt, A.D., Wright, P.J., Young, M.L., Cockayne, B. (1983) The optoelectronic properties of donors in organo-metallic grown zinc selenide. Physica B+C, 116 (1). 508-513 doi:10.1016/0378-4363(83)90300-5
Saminadayar, K., Cox, R.T., Galland, D., Dang, Le Si (1983) EPR and ODMR investigations of defect centres in ZnTe:Cl. Physica B+C, 116 (1). 514-518 doi:10.1016/0378-4363(83)90301-7
Chamonal, J.P., Molva, E., Dupuy, M., Accomo, R., Pautrat, J.L. (1983) Spectral resolution in low temperature cathodoluminescence. Application to CdTe. Physica B+C, 116 (1). 519-526 doi:10.1016/0378-4363(83)90302-9
Cullis, A.G. (1983) Defect structure transitions in silicon induced by Q-switched laser annealing. Physica B+C, 116 (1). 527-536 doi:10.1016/0378-4363(83)90303-0
Mashovets, T.V., Emtsev, V.V. (1983) Ionization mechanisms of defect production in semiconductors. Physica B+C, 116 (1). 537-546 doi:10.1016/0378-4363(83)90304-2
Chantre, A., Kechouane, M., Bois, D. (1983) Vacancy-diffusion model for quenched-in E-centers in CW laser annealed virgin silicon. Physica B+C, 116 (1). 547-552 doi:10.1016/0378-4363(83)90305-4
Sheng, N.H., Merz, J.L. (1983) Fe-related defect centers in Si resulting from CW laser annealing. Physica B+C, 116 (1). 553-557 doi:10.1016/0378-4363(83)90306-6
Peercy, P.S., Calvin, G.J., Thompson, M.O., Mayer, J.W., Hammond, R.B. (1983) Measurements of the melt dynamics in laser annealed semiconductors. Physica B+C, 116 (1). 558-563 doi:10.1016/0378-4363(83)90307-8
Murakami, K., Masuda, K., Aoyagi, Y., Namba, S. (1983) Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements. Physica B+C, 116 (1). 564-569 doi:10.1016/0378-4363(83)90308-x
Salathé, K.P., Gilgen, H.H., Zysset, B. (1983) Dynamical aspects of laser generating luminescence centers in (Al,Ga)As. Physica B+C, 116 (1). 570-574 doi:10.1016/0378-4363(83)90309-1
Van Vechten, J.A. (1983) Origin of CW laser generated high efficiency AlGaAs microstructures. Physica B+C, 116 (1). 575-582 doi:10.1016/0378-4363(83)90310-8
Alexander, H., Kisielowski-Kemmerich, C., Weber, E.R. (1983) Investigations of well defined dislocations in silicon. Physica B+C, 116 (1). 583-593 doi:10.1016/0378-4363(83)90311-x
Küsters, K.H., Alexander, H. (1983) Photoplastic effect in silicon. Physica B+C, 116 (1). 594-599 doi:10.1016/0378-4363(83)90312-1
Ourmazd, A., Wilshaw, P.R., Booker, G.R. (1983) The electrical behaviour of individual dislocations, shockley partials and stacking fault ribbons in silicon. Physica B+C, 116 (1). 600-605 doi:10.1016/0378-4363(83)90313-3
Oshima, R., Sadamitsu, S., Fujita, F.E. (1983) High voltage electron microscope study of defects in silicon. Physica B+C, 116 (1). 606-611 doi:10.1016/0378-4363(83)90314-5
Viegers, M.P.A., Bulle-Lieuwma, C.W.T., Bartels, W.J. (1983) Overcompensation of misfit strain by dislocation networks in phosphorus implanted (001) silicon. Physica B+C, 116 (1). 612-615 doi:10.1016/0378-4363(83)90315-7
Hirata, M., Kiritani, M. (1983) Formation of vacancy and interstitial clustered defects in electron irradiated germanium. Physica B+C, 116 (1). 616-622 doi:10.1016/0378-4363(83)90316-9
Hirata, M., Kiritani, M. (1983) Thermal shrinkage of dislocation loops and the mechanism of self-diffusion in germanium. Physica B+C, 116 (1). 623-628 doi:10.1016/0378-4363(83)90317-0
Snyman, H.C., Neethling, J.H. (1983) Dislocation and void formation in proton-bombarded and annealed gallium arsenide. Physica B+C, 116 (1). 629-634 doi:10.1016/0378-4363(83)90318-2
Stewart, C.P., Blunt, R.T., Booker, G.R., Sanders, I.R. (1983) TEM damage studies and electrical profile measurements of Si+ implanted GaAs. Physica B+C, 116 (1). 635-640 doi:10.1016/0378-4363(83)90319-4
Fnaiech, M., Louchet, F. (1983) Dislocation structures and in situ observations of dislocation motion in InSb. Physica B+C, 116 (1). 641-645 doi:10.1016/0378-4363(83)90320-0
Lu, G., Cockayne, D.J.H. (1983) Dislocation structures and motion in II–VI semiconductors. Physica B+C, 116 (1). 646-649 doi:10.1016/0378-4363(83)90321-2
Hutson, A.R. (1983) Charge transport by dislocations in II–VI compounds. Physica B+C, 116 (1). 650-656 doi:10.1016/0378-4363(83)90322-4
(1983) List of contributors. Physica B+C, 116 (1). 657-658 doi:10.1016/0378-4363(83)90323-6
(1983) Analytic subject index. Physica B+C, 116 (1). 659-661 doi:10.1016/0378-4363(83)90324-8

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(1976, February) Physica B+C Vol. 81 (2) Elsevier BV
(1978, February) Physica B+C Vol. 93 (2) Elsevier BV
(1980, February) Physica B+C Vol. 98 (3) Elsevier BV
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