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Stewart, C.P., Blunt, R.T., Booker, G.R., Sanders, I.R. (1983) TEM damage studies and electrical profile measurements of Si+ implanted GaAs. Physica B+C, 116 (1). 635-640 doi:10.1016/0378-4363(83)90319-4

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Reference TypeJournal (article/letter/editorial)
TitleTEM damage studies and electrical profile measurements of Si+ implanted GaAs
JournalPhysica B+C
AuthorsStewart, C.P.Author
Blunt, R.T.Author
Booker, G.R.Author
Sanders, I.R.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90319-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5132324Long-form Identifiermindat:1:5:5132324:4
GUID0
Full ReferenceStewart, C.P., Blunt, R.T., Booker, G.R., Sanders, I.R. (1983) TEM damage studies and electrical profile measurements of Si+ implanted GaAs. Physica B+C, 116 (1). 635-640 doi:10.1016/0378-4363(83)90319-4
Plain TextStewart, C.P., Blunt, R.T., Booker, G.R., Sanders, I.R. (1983) TEM damage studies and electrical profile measurements of Si+ implanted GaAs. Physica B+C, 116 (1). 635-640 doi:10.1016/0378-4363(83)90319-4
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Ourmazd, A., Wilshaw, P.R., Booker, G.R. (1983) The electrical behaviour of individual dislocations, shockley partials and stacking fault ribbons in silicon. Physica B+C, 116 (1). 600-605 doi:10.1016/0378-4363(83)90313-3
Kouimtzi, S.D. (1983) Low temperature electron damage studies in n-type GaAs. Physica B+C, 116 (1). 384-387 doi:10.1016/0378-4363(83)90277-2
Foy, C.P. (1983) Optical studies of vibronic bands in silicon. Physica B+C, 116 (1). 276-280 doi:10.1016/0378-4363(83)90259-0
De Waard, H., Kemerink, G.J. (1983) Hyperfine interaction and channeling studies of impurities implanted in silicon. Physica B+C, 116 (1). 210-218 doi:10.1016/0378-4363(83)90249-8
Ammerlaan, C.A.J. (1983) Preface. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90216-4
Saminadayar, K., Cox, R.T., Galland, D., Dang, Le Si (1983) EPR and ODMR investigations of defect centres in ZnTe:Cl. Physica B+C, 116 (1). 514-518 doi:10.1016/0378-4363(83)90301-7
Pons, D. (1983) Anisotropic defect introduction in n and p-GaAs by electron irradiation. Physica B+C, 116 (1). 388-393 doi:10.1016/0378-4363(83)90278-4
(1983) Editorial Board. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90215-2
Weber, E.R., Schneider, J. (1983) AsGa antisite defects in GaAs. Physica B+C, 116 (1). 398-403 doi:10.1016/0378-4363(83)90280-2
Gippius, A.A., Vavilov, V.S., Zaitsev, A.M., Zhakupbekov, B.S. (1983) Defects production and interaction in ion-implanted diamond. Physica B+C, 116 (1). 187-194 doi:10.1016/0378-4363(83)90247-4
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