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Weber, E.R., Schneider, J. (1983) AsGa antisite defects in GaAs. Physica B+C, 116 (1). 398-403 doi:10.1016/0378-4363(83)90280-2

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Reference TypeJournal (article/letter/editorial)
TitleAsGa antisite defects in GaAs
JournalPhysica B+C
AuthorsWeber, E.R.Author
Schneider, J.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90280-2Search in ResearchGate
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Mindat Ref. ID5132245Long-form Identifiermindat:1:5:5132245:8
GUID0
Full ReferenceWeber, E.R., Schneider, J. (1983) AsGa antisite defects in GaAs. Physica B+C, 116 (1). 398-403 doi:10.1016/0378-4363(83)90280-2
Plain TextWeber, E.R., Schneider, J. (1983) AsGa antisite defects in GaAs. Physica B+C, 116 (1). 398-403 doi:10.1016/0378-4363(83)90280-2
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Sauer, R., Weber, J. (1983) Photoluminescence characterization of deep defects in silicon. Physica B+C, 116 (1). 195-209 doi:10.1016/0378-4363(83)90248-6
Alexander, H., Kisielowski-Kemmerich, C., Weber, E.R. (1983) Investigations of well defined dislocations in silicon. Physica B+C, 116 (1). 583-593 doi:10.1016/0378-4363(83)90311-x
Martin, G.M., Makram-Ebeid, S. (1983) Manifestations of deep levels point defects in GaAs. Physica B+C, 116 (1). 371-383 doi:10.1016/0378-4363(83)90276-0
Kimerling, L.C. (1983) Defects in semiconductors - 1982. Physica B+C, 116 (1). 1-3 doi:10.1016/0378-4363(83)90218-8
(1983) Editorial Board. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90215-2
Stievenard, D., Bourgoin, J.C., Pons, D. (1983) Defects introduced by high temperature electron irradiation in n-GaAs. Physica B+C, 116 (1). 394-397 doi:10.1016/0378-4363(83)90279-6
Conzelmann, H., Weber, J. (1983) Photoluminescence from chromium-boron pairs in silicon. Physica B+C, 116 (1). 291-296 doi:10.1016/0378-4363(83)90262-0
Van Der Rest, J., Pecheur, P. (1983) Electronic density of states of ideal vacancies and anti-structure defects in GaAs. Physica B+C, 116 (1). 121-126 doi:10.1016/0378-4363(83)90238-3
Davies, G. (1983) Distorted defects in silicon and diamond. Physica B+C, 116 (1). 66-71 doi:10.1016/0378-4363(83)90227-9
Kouimtzi, S.D. (1983) Low temperature electron damage studies in n-type GaAs. Physica B+C, 116 (1). 384-387 doi:10.1016/0378-4363(83)90277-2
Hemstreet, L.A. (1983) Electronic states of selected deep level defects in III–V semiconductors. Physica B+C, 116 (1). 116-120 doi:10.1016/0378-4363(83)90237-1
 
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