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Hutson, A.R. (1983) Charge transport by dislocations in II–VI compounds. Physica B+C, 116 (1). 650-656 doi:10.1016/0378-4363(83)90322-4

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Reference TypeJournal (article/letter/editorial)
TitleCharge transport by dislocations in II–VI compounds
JournalPhysica B+C
AuthorsHutson, A.R.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90322-4Search in ResearchGate
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Mindat Ref. ID5132330Long-form Identifiermindat:1:5:5132330:5
GUID0
Full ReferenceHutson, A.R. (1983) Charge transport by dislocations in II–VI compounds. Physica B+C, 116 (1). 650-656 doi:10.1016/0378-4363(83)90322-4
Plain TextHutson, A.R. (1983) Charge transport by dislocations in II–VI compounds. Physica B+C, 116 (1). 650-656 doi:10.1016/0378-4363(83)90322-4
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Lu, G., Cockayne, D.J.H. (1983) Dislocation structures and motion in II–VI semiconductors. Physica B+C, 116 (1). 646-649 doi:10.1016/0378-4363(83)90321-2
Ammerlaan, C.A.J. (1983) Preface. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90216-4
Labusch, Reiner (1983) One dimensional transport along dislocations. Physica B+C, 117. 203-208 doi:10.1016/0378-4363(83)90483-7
(1983) Editorial Board. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90215-2
Alexander, H., Kisielowski-Kemmerich, C., Weber, E.R. (1983) Investigations of well defined dislocations in silicon. Physica B+C, 116 (1). 583-593 doi:10.1016/0378-4363(83)90311-x
(1983) Conference committees and sponsors. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90217-6
(1983) List of contributors. Physica B+C, 116 (1). 657-658 doi:10.1016/0378-4363(83)90323-6
(1983) Analytic subject index. Physica B+C, 116 (1). 659-661 doi:10.1016/0378-4363(83)90324-8
Kimerling, L.C. (1983) Defects in semiconductors - 1982. Physica B+C, 116 (1). 1-3 doi:10.1016/0378-4363(83)90218-8
Pons, D. (1983) Anisotropic defect introduction in n and p-GaAs by electron irradiation. Physica B+C, 116 (1). 388-393 doi:10.1016/0378-4363(83)90278-4
Küsters, K.H., Alexander, H. (1983) Photoplastic effect in silicon. Physica B+C, 116 (1). 594-599 doi:10.1016/0378-4363(83)90312-1
 
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