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Peercy, P.S., Calvin, G.J., Thompson, M.O., Mayer, J.W., Hammond, R.B. (1983) Measurements of the melt dynamics in laser annealed semiconductors. Physica B+C, 116 (1). 558-563 doi:10.1016/0378-4363(83)90307-8

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Reference TypeJournal (article/letter/editorial)
TitleMeasurements of the melt dynamics in laser annealed semiconductors
JournalPhysica B+C
AuthorsPeercy, P.S.Author
Calvin, G.J.Author
Thompson, M.O.Author
Mayer, J.W.Author
Hammond, R.B.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90307-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5132300Long-form Identifiermindat:1:5:5132300:4
GUID0
Full ReferencePeercy, P.S., Calvin, G.J., Thompson, M.O., Mayer, J.W., Hammond, R.B. (1983) Measurements of the melt dynamics in laser annealed semiconductors. Physica B+C, 116 (1). 558-563 doi:10.1016/0378-4363(83)90307-8
Plain TextPeercy, P.S., Calvin, G.J., Thompson, M.O., Mayer, J.W., Hammond, R.B. (1983) Measurements of the melt dynamics in laser annealed semiconductors. Physica B+C, 116 (1). 558-563 doi:10.1016/0378-4363(83)90307-8
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Kimerling, L.C. (1983) Defects in semiconductors - 1982. Physica B+C, 116 (1). 1-3 doi:10.1016/0378-4363(83)90218-8
Weyer, G., Petersen, J.W., Damgaard, S. (1983) The electronic configuration of amphoteric Sn dopants in IIIā€“V compound semiconductors. Physica B+C, 116 (1). 470-473 doi:10.1016/0378-4363(83)90293-0
Hemstreet, L.A. (1983) Electronic states of selected deep level defects in IIIā€“V semiconductors. Physica B+C, 116 (1). 116-120 doi:10.1016/0378-4363(83)90237-1
De Waard, H., Kemerink, G.J. (1983) Hyperfine interaction and channeling studies of impurities implanted in silicon. Physica B+C, 116 (1). 210-218 doi:10.1016/0378-4363(83)90249-8
(1983) Analytic subject index. Physica B+C, 116 (1). 659-661 doi:10.1016/0378-4363(83)90324-8
Miltenburg, J.W. (1983) Editorial. Physica B+C, 122 (1). doi:10.1016/0378-4363(83)90199-7
Mashovets, T.V., Emtsev, V.V. (1983) Ionization mechanisms of defect production in semiconductors. Physica B+C, 116 (1). 537-546 doi:10.1016/0378-4363(83)90304-2
Chantre, A., Kechouane, M., Bois, D. (1983) Vacancy-diffusion model for quenched-in E-centers in CW laser annealed virgin silicon. Physica B+C, 116 (1). 547-552 doi:10.1016/0378-4363(83)90305-4
(1983) Editorial Board. Physica B+C, 116 (1). doi:10.1016/0378-4363(83)90215-2
Thompson, Michael O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Hammond, R. B. (1983) Melt dynamics of siliconā€onā€sapphire during pulsed laser annealing. Applied Physics Letters, 42 (5). 445-447 doi:10.1063/1.93965
Van Vechten, J.A. (1983) Origin of CW laser generated high efficiency AlGaAs microstructures. Physica B+C, 116 (1). 575-582 doi:10.1016/0378-4363(83)90310-8
 
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