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Murakami, K., Masuda, K., Aoyagi, Y., Namba, S. (1983) Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements. Physica B+C, 116 (1). 564-569 doi:10.1016/0378-4363(83)90308-x

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Reference TypeJournal (article/letter/editorial)
TitleExperimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements
JournalPhysica B+C
AuthorsMurakami, K.Author
Masuda, K.Author
Aoyagi, Y.Author
Namba, S.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90308-xSearch in ResearchGate
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Mindat Ref. ID5132301Long-form Identifiermindat:1:5:5132301:3
GUID0
Full ReferenceMurakami, K., Masuda, K., Aoyagi, Y., Namba, S. (1983) Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements. Physica B+C, 116 (1). 564-569 doi:10.1016/0378-4363(83)90308-x
Plain TextMurakami, K., Masuda, K., Aoyagi, Y., Namba, S. (1983) Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements. Physica B+C, 116 (1). 564-569 doi:10.1016/0378-4363(83)90308-x
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Murakami, Kouichi, Itoh, Hisayoshi, Takita, Kōki, Masuda, Kohzoh (1983) Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing. Physica B+C, 117. 1024-1026 doi:10.1016/0378-4363(83)90726-x
Yuba, Y., Judai, Y., Gamo, K., Namba, S. (1983) OTCS study of defect state in Fe-doped semi-insulating InP induced by ion irradiation and thermal annealing. Physica B+C, 116 (1). 461-466 doi:10.1016/0378-4363(83)90291-7
Segawa, Y., Aoyagi, Y., Komuro, S., Namba, S., Inoue, S., Nakayama, M. (1983) Determination of additional boundary conditions in CuCl. Physica B+C, 117. 309-312 doi:10.1016/0378-4363(83)90515-6
Kurz, H., Liu, J.M., Bloembergen, N. (1983) Pulsed laser annealing of semiconductors experimental facts and open questions. Physica B+C, 117. 1010-1013 doi:10.1016/0378-4363(83)90722-2
Cullis, A.G. (1983) Defect structure transitions in silicon induced by Q-switched laser annealing. Physica B+C, 116 (1). 527-536 doi:10.1016/0378-4363(83)90303-0
Tajima, K., Ishikawa, Y., Kanai, K., Tomiyoshi, S., Todate, Y. (1983) Multi-analyser crystal spectrometer (max) for pulsed neutron source and its application to various problems. Physica B+C, 120 (1). 136-139 doi:10.1016/0378-4363(83)90356-x
Oraby, A. H., Murakami, K., Yuba, Y., Gamo, K., Namba, S., Masuda, Y. (1981) Laser annealing of ohmic contacts on GaAs. Applied Physics Letters, 38 (7). 562-564 doi:10.1063/1.92413
Murakami, K., Kawabe, M., Gamo, K., Namba, S., Aoyagi, Y. (1979) Dynamic behavior of pulsed-laser annealing in ion-implanted silicon. Physics Letters A, 70. 332-334 doi:10.1016/0375-9601(79)90140-3
Wada, T., Sakurai, K. (1983) 20KeV electron-beam annealing of defects in GaAsP during SEM measurement. Physica B+C, 116 (1). 479-486 doi:10.1016/0378-4363(83)90295-4
Saminadayar, K., Cox, R.T., Galland, D., Dang, Le Si (1983) EPR and ODMR investigations of defect centres in ZnTe:Cl. Physica B+C, 116 (1). 514-518 doi:10.1016/0378-4363(83)90301-7
Toyozawa, Y. (1983) Electron induced lattice relaxations and defect reactions. Physica B+C, 116 (1). 7-17 doi:10.1016/0378-4363(83)90219-x
 
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