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Jaworowski, A.E., Oehrlein, G.S., Corbett, J.W. (1983) Electron irradiation effects in edge-defined film-fed growth ribbon silicon. Physica B+C, 116 (1). 287-290 doi:10.1016/0378-4363(83)90261-9

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Reference TypeJournal (article/letter/editorial)
TitleElectron irradiation effects in edge-defined film-fed growth ribbon silicon
JournalPhysica B+C
AuthorsJaworowski, A.E.Author
Oehrlein, G.S.Author
Corbett, J.W.Author
Year1983 (February)Volume116
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0378-4363(83)90261-9Search in ResearchGate
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Mindat Ref. ID5132207Long-form Identifiermindat:1:5:5132207:8
GUID0
Full ReferenceJaworowski, A.E., Oehrlein, G.S., Corbett, J.W. (1983) Electron irradiation effects in edge-defined film-fed growth ribbon silicon. Physica B+C, 116 (1). 287-290 doi:10.1016/0378-4363(83)90261-9
Plain TextJaworowski, A.E., Oehrlein, G.S., Corbett, J.W. (1983) Electron irradiation effects in edge-defined film-fed growth ribbon silicon. Physica B+C, 116 (1). 287-290 doi:10.1016/0378-4363(83)90261-9
In(1983, February) Physica B+C Vol. 116 (1) Elsevier BV

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Oehrlein, G.S., Lindström, J.L., Krafcsik, I., Jaworowski, A.E., Corbett, J.W. (1983) A quantitative investigation of divacancy production enhancement by interstitial oxygen in electron-irradiated silicon. Physica B+C, 116 (1). 230-235 doi:10.1016/0378-4363(83)90252-8
Jaworowski, A. E., Pierce, C. B., Burdick, S., Corbett, J. W., Hanoka, J. I. (1981) Deep levels in electron irradiated edge‐defined film‐fed growth ribbon silicon. Journal of Applied Physics, 52 (5). 3337-3340 doi:10.1063/1.329155
Oehrlein, G.S., Challou, D.J., Jaworowski, A.E., Corbett, J.W. (1981) The role of carbon in the precipitation of oxygen in silicon. Physics Letters A, 86. 117-119 doi:10.1016/0375-9601(81)90180-8
Alexander, H., Kisielowski-Kemmerich, C., Weber, E.R. (1983) Investigations of well defined dislocations in silicon. Physica B+C, 116 (1). 583-593 doi:10.1016/0378-4363(83)90311-x
Davies, G. (1983) Distorted defects in silicon and diamond. Physica B+C, 116 (1). 66-71 doi:10.1016/0378-4363(83)90227-9
Pons, D. (1983) Anisotropic defect introduction in n and p-GaAs by electron irradiation. Physica B+C, 116 (1). 388-393 doi:10.1016/0378-4363(83)90278-4
Küsters, K.H., Alexander, H. (1983) Photoplastic effect in silicon. Physica B+C, 116 (1). 594-599 doi:10.1016/0378-4363(83)90312-1
Miltenburg, J.W. (1983) Editorial. Physica B+C, 122 (1). doi:10.1016/0378-4363(83)90199-7
Stievenard, D., Bourgoin, J.C., Pons, D. (1983) Defects introduced by high temperature electron irradiation in n-GaAs. Physica B+C, 116 (1). 394-397 doi:10.1016/0378-4363(83)90279-6
Benton, J.L., Kimerling, L.C., Stavola, M. (1983) The oxygen related donor effect in silicon. Physica B+C, 116 (1). 271-275 doi:10.1016/0378-4363(83)90258-9
Pomrenke, G.S., Park, Y.S., Hengehold, R.L., Maclin, M.T. (1983) Luminescence characteristics of the 1.4 eV silicon related complex in gallium arsenide. Physica B+C, 116 (1). 414-419 doi:10.1016/0378-4363(83)90283-8
 
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