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Vajpeyi, A. P., Tripathy, S., Wang, L. S., Foo, B. C., Chua, S. J., Fitzgerald, E. A., Alves, E. (2006) Optical activation of Eu ions in nanoporous GaN films. Journal of Applied Physics, 99 (10). 104305pp. doi:10.1063/1.2191647

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Reference TypeJournal (article/letter/editorial)
TitleOptical activation of Eu ions in nanoporous GaN films
JournalJournal of Applied Physics
AuthorsVajpeyi, A. P.Author
Tripathy, S.Author
Wang, L. S.Author
Foo, B. C.Author
Chua, S. J.Author
Fitzgerald, E. A.Author
Alves, E.Author
Year2006 (May 15)Volume99
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2191647Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5137114Long-form Identifiermindat:1:5:5137114:4
GUID0
Full ReferenceVajpeyi, A. P., Tripathy, S., Wang, L. S., Foo, B. C., Chua, S. J., Fitzgerald, E. A., Alves, E. (2006) Optical activation of Eu ions in nanoporous GaN films. Journal of Applied Physics, 99 (10). 104305pp. doi:10.1063/1.2191647
Plain TextVajpeyi, A. P., Tripathy, S., Wang, L. S., Foo, B. C., Chua, S. J., Fitzgerald, E. A., Alves, E. (2006) Optical activation of Eu ions in nanoporous GaN films. Journal of Applied Physics, 99 (10). 104305pp. doi:10.1063/1.2191647
In(2006, May) Journal of Applied Physics Vol. 99 (10) AIP Publishing

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Vajpeyi, A. P., Chua, S. J., Tripathy, S., Fitzgerald, E. A. (2007) Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching. Applied Physics Letters, 91 (8). 83110pp. doi:10.1063/1.2772753
Wang, Y. D., Chua, S. J., Sander, M. S., Chen, P., Tripathy, S., Fonstad, C. G. (2004) Fabrication and properties of nanoporous GaN films. Applied Physics Letters, 85 (5). 816-818 doi:10.1063/1.1774273
Song, T. L., Chua, S. J., Fitzgerald, E. A., Chen, P., Tripathy, S. (2003) Strain relaxation in graded InGaN/GaN epilayers grown on sapphire. Applied Physics Letters, 83 (8). 1545-1547 doi:10.1063/1.1598295
Zang, K. Y., Wang, Y. D., Chua, S. J., Wang, L. S., Tripathy, S., Thompson, C. V. (2006) Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111). Applied Physics Letters, 88 (14). 141925pp. doi:10.1063/1.2189114
Hartono, H., Soh, C. B., Chow, S. Y., Chua, S. J., Fitzgerald, E. A. (2007) Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template. Applied Physics Letters, 90 (17). 171917pp. doi:10.1063/1.2732826
Soh, C. B., Hartono, H., Chow, S. Y., Chua, S. J., Fitzgerald, E. A. (2007) Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth. Applied Physics Letters, 90 (5). 53112pp. doi:10.1063/1.2437056
Soh, C. B., Liu, W., Hartono, H., Ang, Norman S. S., Chua, S. J., Chow, S. Y., Tay, C. B., Vajpeyi, A. P. (2011) Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN. Applied Physics Letters, 98 (19). 191906pp. doi:10.1063/1.3589969
Soh, C. B., Chua, S. J., Sim, S. H., Tripathy, S., Alves, E. (2008) Luminescence and vibrational properties of erbium-implanted nanoporous GaN. physica status solidi (c), 5 (6). 1753-1755 doi:10.1002/pssc.200778623
Wang, Y. D., Zang, K. Y., Chua, S. J., Tripathy, S., Chen, P., Fonstad, C. G. (2005) Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template. Applied Physics Letters, 87 (25). 251915pp. doi:10.1063/1.2147716
Hartono, H., Soh, C. B., Chua, S. J., Fitzgerald, E. A. (2007) High Quality GaN Grown from a Nanoporous GaN Template. Journal of the Electrochemical Society, 154. doi:10.1149/1.2792344
Tripathy, S., Chua, S. J., Hao, M. S., Sia, E. K., Ramam, A., Zhang, J., Sun, W. H., Wang, L. S. (2002) Micro-Raman scattering in laterally epitaxial overgrown GaN. Journal of Applied Physics, 91 (9). 5840-5852 doi:10.1063/1.1467952
 
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