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Harding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P., Wong-Leung, J. (2006) Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7). 73501pp. doi:10.1063/1.2354332

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Reference TypeJournal (article/letter/editorial)
TitleIdentification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon
JournalJournal of Applied Physics
AuthorsHarding, R.Author
Davies, G.Author
Tan, J.Author
Coleman, P. G.Author
Burrows, C. P.Author
Wong-Leung, J.Author
Year2006 (October)Volume100
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2354332Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5144174Long-form Identifiermindat:1:5:5144174:4
GUID0
Full ReferenceHarding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P., Wong-Leung, J. (2006) Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7). 73501pp. doi:10.1063/1.2354332
Plain TextHarding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P., Wong-Leung, J. (2006) Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7). 73501pp. doi:10.1063/1.2354332
In(2006, October) Journal of Applied Physics Vol. 100 (7) AIP Publishing

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Harding, R., Davies, G., Coleman, P.G., Burrows, C.P., Wong-Leung, J. (2003) Study of defects in ion-implanted silicon using photoluminescence and positron annihilation. Physica B: Condensed Matter, 340. 738-742 doi:10.1016/j.physb.2003.09.152
Harding, Ruth E., Davies, Gordon, Hayama, S., Coleman, P. G., Burrows, C. P., Wong-Leung, J. (2006) Photoluminescence response of ion-implanted silicon. Applied Physics Letters, 89 (18). 181917pp. doi:10.1063/1.2378402
Pellegrino, P., LĂ©vĂȘque, P., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2001) Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation. Applied Physics Letters, 78 (22). 3442-3444 doi:10.1063/1.1374960
Coleman, P. G., Nash, D., Edwardson, C. J., Knights, A. P., Gwilliam, R. M. (2011) The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy. Journal of Applied Physics, 110 (1). 16104pp. doi:10.1063/1.3605487
LĂ©vĂȘque, P., Nielsen, H. Kortegaard, Pellegrino, P., HallĂ©n, A., Svensson, B. G., Kuznetsov, A. Yu., Wong-Leung, J., Jagadish, C., Privitera, V. (2003) Vacancy and interstitial depth profiles in ion-implanted silicon. Journal of Applied Physics, 93 (2). 871-877 doi:10.1063/1.1528304
Pi, X D, Burrows, C P, Coleman, P G, Gwilliam, R M, Sealy, B J (2003) Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics: Condensed Matter, 15 (39). doi:10.1088/0953-8984/15/39/007
Knights, A. P., Malik, F., Coleman, P. G. (1999) The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy. Applied Physics Letters, 75 (4). 466-468 doi:10.1063/1.124410
Coleman, P. G., Burrows, C. P. (2007) Monovacancy and Interstitial Migration in Ion-Implanted Silicon. Physical Review Letters, 98 (26). doi:10.1103/physrevlett.98.265502
Pellegrino, P., LĂ©vĂȘque, P., Kortegaard-Nielsen, H., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2002) Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)]. Applied Physics Letters, 80 (8). 1494-1495 doi:10.1063/1.1455141
Coleman, P. G., Burrows, C. P., Mahapatra, R., Wright, N. G. (2007) Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks. Journal of Applied Physics, 102 (1). 14106pp. doi:10.1063/1.2752129
McGuire, S., Keeble, D. J., Mason, R. E., Coleman, P. G., Koutsonas, Y., Jackson, T. J. (2006) Variable energy positron beam analysis of vacancy defects in laser ablated SrTiO3 thin films on SrTiO3. Journal of Applied Physics, 100 (4). 44109pp. doi:10.1063/1.2245214
 
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