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Ryu, Seong-Wan, Choi, Yang-Kyu, Mo, Chan Bin, Hong, Soon Hyung, Park, Pan Kwi, Kang, Sang-Won (2007) A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications. Journal of Applied Physics, 101 (2). 26109pp. doi:10.1063/1.2430785

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Reference TypeJournal (article/letter/editorial)
TitleA thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications
JournalJournal of Applied Physics
AuthorsRyu, Seong-WanAuthor
Choi, Yang-KyuAuthor
Mo, Chan BinAuthor
Hong, Soon HyungAuthor
Park, Pan KwiAuthor
Kang, Sang-WonAuthor
Year2007 (January 15)Volume101
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2430785Search in ResearchGate
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Mindat Ref. ID5146558Long-form Identifiermindat:1:5:5146558:6
GUID0
Full ReferenceRyu, Seong-Wan, Choi, Yang-Kyu, Mo, Chan Bin, Hong, Soon Hyung, Park, Pan Kwi, Kang, Sang-Won (2007) A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications. Journal of Applied Physics, 101 (2). 26109pp. doi:10.1063/1.2430785
Plain TextRyu, Seong-Wan, Choi, Yang-Kyu, Mo, Chan Bin, Hong, Soon Hyung, Park, Pan Kwi, Kang, Sang-Won (2007) A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications. Journal of Applied Physics, 101 (2). 26109pp. doi:10.1063/1.2430785
In(2007, January) Journal of Applied Physics Vol. 101 (2) AIP Publishing

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