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Park, Pan Kwi, Cha, Eun-Soo, Kang, Sang-Won (2007) Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (23). 232906pp. doi:10.1063/1.2746416

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Reference TypeJournal (article/letter/editorial)
TitleInterface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
JournalApplied Physics Letters
AuthorsPark, Pan KwiAuthor
Cha, Eun-SooAuthor
Kang, Sang-WonAuthor
Year2007 (June 4)Volume90
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2746416Search in ResearchGate
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Mindat Ref. ID8554467Long-form Identifiermindat:1:5:8554467:5
GUID0
Full ReferencePark, Pan Kwi, Cha, Eun-Soo, Kang, Sang-Won (2007) Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (23). 232906pp. doi:10.1063/1.2746416
Plain TextPark, Pan Kwi, Cha, Eun-Soo, Kang, Sang-Won (2007) Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (23). 232906pp. doi:10.1063/1.2746416
In(2007, June) Applied Physics Letters Vol. 90 (23) AIP Publishing

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Park, Pan Kwi, Kang, Sang-Won (2006) Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3. Applied Physics Letters, 89 (19). 192905pp. doi:10.1063/1.2387126
Kim, Inhoe, Kuk, Seoungwoo, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B. (2007) Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (22). 222101pp. doi:10.1063/1.2743749
Park, Jin-Seong, Park, Hyung-Sang, Kang, Sang-Won (2002) Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films. Journal of the Electrochemical Society, 149. doi:10.1149/1.1423642
Ryu, Seong-Wan, Choi, Yang-Kyu, Mo, Chan Bin, Hong, Soon Hyung, Park, Pan Kwi, Kang, Sang-Won (2007) A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications. Journal of Applied Physics, 101 (2). 26109pp. doi:10.1063/1.2430785
Min, Jae-Sik, Park, Hyung-Sang, Kang, Sang-Won (1999) Metal–organic atomic-layer deposition of titanium–silicon–nitride films. Applied Physics Letters, 75 (11). 1521-1523 doi:10.1063/1.124742
Kim, Ja-Yong, Kim, Jin-Hyock, Ahn, Ji-Hoon, Park, Pan-Kwi, Kang, Sang-Won (2007) Applicability of Step-Coverage Modeling to TiO[sub 2] Thin Films in Atomic Layer Deposition. Journal of the Electrochemical Society, 154. doi:10.1149/1.2789802
Kim, Su Young, Kwon, Hyuk, Jo, Sang Jin, Ha, Jeong Sook, Park, Won Tae, Kang, Dong Kyun, Kim, Byong-Ho (2007) Effects of Al content on the electrical properties of LaxAlyOz films grown on TiN substrate by atomic layer deposition. Applied Physics Letters, 90 (10). 103104pp. doi:10.1063/1.2709951
Cho, Moonju, Kim, Jeong Hwan, Hwang, Cheol Seong, Ahn, Hyo-Shin, Han, Seungwu, Won, Jeong Yeon (2007) Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability. Applied Physics Letters, 90 (18). 182907pp. doi:10.1063/1.2735945
Hoppe, E. E., Aita, C. R., Gajdardziska-Josifovska, M. (2007) Initial phases in sputter deposited HfO2–Al2O3 nanolaminate films. Applied Physics Letters, 91 (20). 203105pp. doi:10.1063/1.2813624
Sreenivasan, Raghavasimhan, Sugawara, Takuya, Saraswat, Krishna C., McIntyre, Paul C. (2007) High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications. Applied Physics Letters, 90 (10). 102101pp. doi:10.1063/1.2643085
Yang, T., Xuan, Y., Zemlyanov, D., Shen, T., Wu, Y. Q., Woodall, J. M., Ye, P. D., Aguirre-Tostado, F. S., Milojevic, M., McDonnell, S., Wallace, R. M. (2007) Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric. Applied Physics Letters, 91 (14). 142122pp. doi:10.1063/1.2798499
 
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