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Asghar, M., Hussain, I., Noor, H. S., Iqbal, F., Wahab, Q., Bhatti, A. S. (2007) Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy. Journal of Applied Physics, 101 (7). 73706pp. doi:10.1063/1.2715534

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Reference TypeJournal (article/letter/editorial)
TitleProperties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy
JournalJournal of Applied Physics
AuthorsAsghar, M.Author
Hussain, I.Author
Noor, H. S.Author
Iqbal, F.Author
Wahab, Q.Author
Bhatti, A. S.Author
Year2007 (April)Volume101
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2715534Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5148001Long-form Identifiermindat:1:5:5148001:7
GUID0
Full ReferenceAsghar, M., Hussain, I., Noor, H. S., Iqbal, F., Wahab, Q., Bhatti, A. S. (2007) Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy. Journal of Applied Physics, 101 (7). 73706pp. doi:10.1063/1.2715534
Plain TextAsghar, M., Hussain, I., Noor, H. S., Iqbal, F., Wahab, Q., Bhatti, A. S. (2007) Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy. Journal of Applied Physics, 101 (7). 73706pp. doi:10.1063/1.2715534
In(2007, April) Journal of Applied Physics Vol. 101 (7) AIP Publishing

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Asghar, M., Iqbal, F., Faraz, S., Jokubavicius, V., Wahab, Q., Syväjärvi, M. (2012) Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy. Physica B: Condensed Matter, 407 (15). 3041-3043 doi:10.1016/j.physb.2011.08.085
Danno, Katsunori, Kimoto, Tsunenobu (2007) Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers. Journal of Applied Physics, 101 (10). 103704pp. doi:10.1063/1.2730569
Asghar, M., Iqbal, F., Faraz, S.M., Jokubavicius, V., Wahab, Q., Syväjärvi, M. (2012) Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method. Physica B: Condensed Matter, 407 (15). 3038-3040 doi:10.1016/j.physb.2011.08.036
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