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Walls, Thomas J., Likharev, Konstantin K. (2008) Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 104 (12). 124307pp. doi:10.1063/1.3039959

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Reference TypeJournal (article/letter/editorial)
TitleTwo-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors
JournalJournal of Applied Physics
AuthorsWalls, Thomas J.Author
Likharev, Konstantin K.Author
Year2008 (December 15)Volume104
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3039959Search in ResearchGate
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Mindat Ref. ID5158264Long-form Identifiermindat:1:5:5158264:3
GUID0
Full ReferenceWalls, Thomas J., Likharev, Konstantin K. (2008) Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 104 (12). 124307pp. doi:10.1063/1.3039959
Plain TextWalls, Thomas J., Likharev, Konstantin K. (2008) Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 104 (12). 124307pp. doi:10.1063/1.3039959
In(2008, December) Journal of Applied Physics Vol. 104 (12) AIP Publishing

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Pikus, F. G., Likharev, K. K. (1997) Nanoscale field-effect transistors: An ultimate size analysis. Applied Physics Letters, 71 (25). 3661-3663 doi:10.1063/1.120473
Liu, Keng-Ming, Chen, Wanqiang, Register, Leonard F., Banerjee, Sanjay K. (2008) Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors. Journal of Applied Physics, 104 (11). 114515pp. doi:10.1063/1.3031303
Chen, Wanqiang, Register, Leonard F., Banerjee, Sanjay K. (2008) Schrödinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 103 (2). 24508pp. doi:10.1063/1.2809403
Heinz, Frederik O., Schenk, Andreas (2006) Self-consistent modeling of longitudinal quantum effects in nanoscale double-gate metal oxide semiconductor field effect transistors. Journal of Applied Physics, 100 (8). 84314pp. doi:10.1063/1.2355540
Kobayashi, Masaharu, Hiramoto, Toshiro (2008) Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors. Journal of Applied Physics, 103 (5). 53709pp. doi:10.1063/1.2874247
Navid, Reza, Jungemann, Christoph, Lee, Thomas H., Dutton, Robert W. (2007) High-frequency noise in nanoscale metal oxide semiconductor field effect transistors. Journal of Applied Physics, 101 (12). 124501pp. doi:10.1063/1.2740345
Gilbert, M. J., Ferry, D. K. (2004) Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. Journal of Applied Physics, 95 (12). 7954-7960 doi:10.1063/1.1699496
Chang, Jiwon (2015) Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors. Journal of Applied Physics, 117 (21). 214502pp. doi:10.1063/1.4921806
Jiménez-Molinos, F., Gámiz, F., Donetti, L. (2008) Coulomb scattering in high-κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 104 (6). 63704pp. doi:10.1063/1.2975993
Fiori, G., Iannaccone, G. (2002) Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 81 (19). 3672-3674 doi:10.1063/1.1519349
Gao, Qun, Ouyang, Yijian, Guo, Jing (2011) Two-dimensional quantum mechanical modeling of silicide–silicon contact resistance for nanoscale silicon-on-insulator metal-oxide-semiconductor field effect transistor. Journal of Applied Physics, 109 (10). 104307pp. doi:10.1063/1.3587183
 
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