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Chang, Jiwon (2015) Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors. Journal of Applied Physics, 117 (21). 214502pp. doi:10.1063/1.4921806

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Reference TypeJournal (article/letter/editorial)
TitleModeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
JournalJournal of Applied Physics
AuthorsChang, JiwonAuthor
Year2015 (June 7)Volume117
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.4921806Search in ResearchGate
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Mindat Ref. ID5201853Long-form Identifiermindat:1:5:5201853:4
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Full ReferenceChang, Jiwon (2015) Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors. Journal of Applied Physics, 117 (21). 214502pp. doi:10.1063/1.4921806
Plain TextChang, Jiwon (2015) Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors. Journal of Applied Physics, 117 (21). 214502pp. doi:10.1063/1.4921806
In(2015, June) Journal of Applied Physics Vol. 117 (21) AIP Publishing

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Chang, Jiwon, Hobbs, Chris (2015) Theoretical study of phosphorene tunneling field effect transistors. Applied Physics Letters, 106 (8). 83509pp. doi:10.1063/1.4913842
Chang, Jiwon, Register, Leonard F., Banerjee, Sanjay K. (2014) Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 115 (8). 84506pp. doi:10.1063/1.4866872
Chang, Jiwon, Register, Leonard F., Banerjee, Sanjay K. (2012) Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 112 (12). 124511pp. doi:10.1063/1.4770324
Walls, Thomas J., Likharev, Konstantin K. (2008) Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 104 (12). 124307pp. doi:10.1063/1.3039959
Lee, Yeonghun, Kakushima, Kuniyuki, Natori, Kenji, Iwai, Hiroshi (2015) Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 118 (15). 155105pp. doi:10.1063/1.4933287
Chang, Jiwon (2018) Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures. Nanoscale, 10. 13652-13660 doi:10.1039/c8nr03191f
Fiori, G., Iannaccone, G. (2002) Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 81 (19). 3672-3674 doi:10.1063/1.1519349
Yin, Demin, Yoon, Youngki (2016) Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs. Journal of Applied Physics, 119 (21). 214312pp. doi:10.1063/1.4953256
Gilbert, M. J., Ferry, D. K. (2004) Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. Journal of Applied Physics, 95 (12). 7954-7960 doi:10.1063/1.1699496
Seo, Dongwook, Chang, Jiwon (2019) Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene. Scientific Reports, 9. doi:10.1038/s41598-019-40675-7
Natori, Kenji, Iwai, Hiroshi, Kakushima, Kuniyuki (2015) Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 118 (23). 234502pp. doi:10.1063/1.4937548
 
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