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Tripathy, S., Sale, T. E., Dadgar, A., Lin, V. K. X., Zang, K. Y., Teo, S. L., Chua, S. J., Bläsing, J., Krost, A. (2008) GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates. Journal of Applied Physics, 104 (5). 53106pp. doi:10.1063/1.2973684

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Reference TypeJournal (article/letter/editorial)
TitleGaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates
JournalJournal of Applied Physics
AuthorsTripathy, S.Author
Sale, T. E.Author
Dadgar, A.Author
Lin, V. K. X.Author
Zang, K. Y.Author
Teo, S. L.Author
Chua, S. J.Author
Bläsing, J.Author
Krost, A.Author
Year2008 (September)Volume104
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2973684Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5159493Long-form Identifiermindat:1:5:5159493:0
GUID0
Full ReferenceTripathy, S., Sale, T. E., Dadgar, A., Lin, V. K. X., Zang, K. Y., Teo, S. L., Chua, S. J., Bläsing, J., Krost, A. (2008) GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates. Journal of Applied Physics, 104 (5). 53106pp. doi:10.1063/1.2973684
Plain TextTripathy, S., Sale, T. E., Dadgar, A., Lin, V. K. X., Zang, K. Y., Teo, S. L., Chua, S. J., Bläsing, J., Krost, A. (2008) GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates. Journal of Applied Physics, 104 (5). 53106pp. doi:10.1063/1.2973684
In(2008, September) Journal of Applied Physics Vol. 104 (5) AIP Publishing

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Tripathy, S., Lin, V. K. X., Teo, S. L., Dadgar, A., Diez, A., Bläsing, J., Krost, A. (2007) InGaN∕GaN light emitting diodes on nanoscale silicon on insulator. Applied Physics Letters, 91 (23). 231109pp. doi:10.1063/1.2814062
Tripathy, S., Dadgar, A., Zang, K. Y., Lin, V. K. X., Liu, Y. C., Teo, S. L., Yong, A. M., Soh, C. B., Chua, S. J., Bläsing, J., Christen, J., Krost, A. (2009) GaN-based deep green light emitting diodes on silicon-on-insulator substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880778
Tripathy, S., Teo, S. L., Lin, V. K. X., Chen, M. F., Dadgar, A., Christen, J., Krost, A. (2010) Light extraction from GaN-based LED structures on silicon-on-insulator substrates. physica status solidi (c), 7 (1). 88-91 doi:10.1002/pssc.200982637
Wang, L. S., Tripathy, S., Chua, S. J., Zang, K. Y. (2005) InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates. Applied Physics Letters, 87 (11). 111908pp. doi:10.1063/1.2045562
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Zang, K. Y., Wang, Y. D., Chua, S. J., Wang, L. S., Tripathy, S., Thompson, C. V. (2006) Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111). Applied Physics Letters, 88 (14). 141925pp. doi:10.1063/1.2189114
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Schulze, F., Dadgar, A., Bläsing, J., Diez, A., Krost, A. (2006) Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate. Applied Physics Letters, 88 (12). 121114pp. doi:10.1063/1.2188383
Dadgar, A., Poschenrieder, M., Bläsing, J., Fehse, K., Diez, A., Krost, A. (2002) Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking. Applied Physics Letters, 80 (20). 3670-3672 doi:10.1063/1.1479455
Jin, S. X., Li, J., Li, J. Z., Lin, J. Y., Jiang, H. X. (2000) GaN microdisk light emitting diodes. Applied Physics Letters, 76 (5). 631-633 doi:10.1063/1.125841
Zang, K. Y., Chua, S. J., Teng, J. H., Ang, N. S. S., Yong, A. M., Chow, S. Y. (2008) Nanoepitaxy to improve the efficiency of InGaN light-emitting diodes. Applied Physics Letters, 92 (24). 243126pp. doi:10.1063/1.2949983
 
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