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Tripathy, S., Lin, V. K. X., Teo, S. L., Dadgar, A., Diez, A., Bläsing, J., Krost, A. (2007) InGaN∕GaN light emitting diodes on nanoscale silicon on insulator. Applied Physics Letters, 91 (23). 231109pp. doi:10.1063/1.2814062

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Reference TypeJournal (article/letter/editorial)
TitleInGaN∕GaN light emitting diodes on nanoscale silicon on insulator
JournalApplied Physics Letters
AuthorsTripathy, S.Author
Lin, V. K. X.Author
Teo, S. L.Author
Dadgar, A.Author
Diez, A.Author
Bläsing, J.Author
Krost, A.Author
Year2007 (December 3)Volume91
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2814062Search in ResearchGate
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Mindat Ref. ID8558168Long-form Identifiermindat:1:5:8558168:5
GUID0
Full ReferenceTripathy, S., Lin, V. K. X., Teo, S. L., Dadgar, A., Diez, A., Bläsing, J., Krost, A. (2007) InGaN∕GaN light emitting diodes on nanoscale silicon on insulator. Applied Physics Letters, 91 (23). 231109pp. doi:10.1063/1.2814062
Plain TextTripathy, S., Lin, V. K. X., Teo, S. L., Dadgar, A., Diez, A., Bläsing, J., Krost, A. (2007) InGaN∕GaN light emitting diodes on nanoscale silicon on insulator. Applied Physics Letters, 91 (23). 231109pp. doi:10.1063/1.2814062
In(2007, December) Applied Physics Letters Vol. 91 (23) AIP Publishing

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