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Kakiuchi, Hiroaki, Ohmi, Hiromasa, Inudzuka, Ryohei, Ouchi, Kentaro, Yasutake, Kiyoshi (2008) Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode. Journal of Applied Physics, 104 (5). 53522pp. doi:10.1063/1.2975978

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode
JournalJournal of Applied Physics
AuthorsKakiuchi, HiroakiAuthor
Ohmi, HiromasaAuthor
Inudzuka, RyoheiAuthor
Ouchi, KentaroAuthor
Yasutake, KiyoshiAuthor
Year2008 (September)Volume104
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2975978Search in ResearchGate
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Mindat Ref. ID5159618Long-form Identifiermindat:1:5:5159618:7
GUID0
Full ReferenceKakiuchi, Hiroaki, Ohmi, Hiromasa, Inudzuka, Ryohei, Ouchi, Kentaro, Yasutake, Kiyoshi (2008) Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode. Journal of Applied Physics, 104 (5). 53522pp. doi:10.1063/1.2975978
Plain TextKakiuchi, Hiroaki, Ohmi, Hiromasa, Inudzuka, Ryohei, Ouchi, Kentaro, Yasutake, Kiyoshi (2008) Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode. Journal of Applied Physics, 104 (5). 53522pp. doi:10.1063/1.2975978
In(2008, September) Journal of Applied Physics Vol. 104 (5) AIP Publishing

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Kakiuchi, Hiroaki, Ohmi, Hiromasa, Ouchi, Kentaro, Tabuchi, Keita, Yasutake, Kiyoshi (2009) Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma. Journal of Applied Physics, 106 (1). 13521pp. doi:10.1063/1.3159887
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Tawara, Naotaka, Wakamiya, Takuya, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi (2006) Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode. Japanese Journal of Applied Physics, 45 (10) 8424-8429 doi:10.1143/jjap.45.8424
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hamaoka, Yoshinori, Yasutake, Kiyoshi (2007) Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma. Journal of Applied Physics, 102 (2). 23302pp. doi:10.1063/1.2753675
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma. Applied Physics Letters, 90 (15). 151904pp. doi:10.1063/1.2721366
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi (2021) Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films. Journal of Applied Physics, 130 (5) 53307pp. doi:10.1063/5.0057951
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2015) Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma. Journal of Applied Physics, 118 (4). 45301pp. doi:10.1063/1.4926849
Ohmi, Hiromasa, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2008) Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport. Journal of Physics D: Applied Physics, 41. 195208pp. doi:10.1088/0022-3727/41/19/195208
Yasutake, Kiyoshi, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Wakamiya, Takuya, Watanabe, Heiji (2006) Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode. Japanese Journal of Applied Physics, 45 (4) 3592-3597 doi:10.1143/jjap.45.3592
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma. Applied Physics Letters, 90 (9). 91909pp. doi:10.1063/1.2710190
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Aketa, Masatoshi, Nakamura, Ryota, Yasutake, Kiyoshi (2008) Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure. Surface and Interface Analysis, 40 (6). 974-978 doi:10.1002/sia.2814
Yoshida, Kazushi, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki (2021) Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium. Journal of Applied Physics, 130 (6) 63301pp. doi:10.1063/5.0055532
 
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