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Ohmi, Hiromasa, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2008) Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport. Journal of Physics D: Applied Physics, 41. 195208pp. doi:10.1088/0022-3727/41/19/195208

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Reference TypeJournal (article/letter/editorial)
TitleImpacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport
JournalJournal of Physics D: Applied Physics
AuthorsOhmi, HiromasaAuthor
Kishimoto, KazuyaAuthor
Kakiuchi, HiroakiAuthor
Yasutake, KiyoshiAuthor
Year2008 (October 7)Volume41
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/41/19/195208Search in ResearchGate
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Mindat Ref. ID5673910Long-form Identifiermindat:1:5:5673910:3
GUID0
Full ReferenceOhmi, Hiromasa, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2008) Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport. Journal of Physics D: Applied Physics, 41. 195208pp. doi:10.1088/0022-3727/41/19/195208
Plain TextOhmi, Hiromasa, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2008) Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport. Journal of Physics D: Applied Physics, 41. 195208pp. doi:10.1088/0022-3727/41/19/195208
In(2008) Journal of Physics D: Applied Physics Vol. 41. IOP Publishing

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Kamada, Daiki, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi, Ohmi, Hiromasa (2008) High-rate preparation of thin Si films by atmospheric-pressure plasma enhanced chemical transport. Surface and Interface Analysis, 40 (6). 979-983 doi:10.1002/sia.2877
Ohmi, Hiromasa, Hori, Takahiro, Mori, Tetsuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2011) Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport. Journal of Physics D: Applied Physics, 44. 235202pp. doi:10.1088/0022-3727/44/23/235202
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hamaoka, Yoshinori, Yasutake, Kiyoshi (2007) Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma. Journal of Applied Physics, 102 (2). 23302pp. doi:10.1063/1.2753675
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi (2021) Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films. Journal of Applied Physics, 130 (5) 53307pp. doi:10.1063/5.0057951
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi (2020) Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors. Journal of Physics D: Applied Physics, 53 (41) 415201pp. doi:10.1088/1361-6463/ab9919
Ohmi, Hiromasa, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2010) PFC-Free Dry Etching Method for Si Using Narrow-Gap VHF Plasma at Subatmospheric Pressure. Journal of the Electrochemical Society, 157. doi:10.1149/1.3265990
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Inudzuka, Ryohei, Ouchi, Kentaro, Yasutake, Kiyoshi (2008) Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode. Journal of Applied Physics, 104 (5). 53522pp. doi:10.1063/1.2975978
Ohmi, Hiromasa, Funaki, Takeshi, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma. Journal of Physics D: Applied Physics, 49. 35202pp. doi:10.1088/0022-3727/49/3/035202
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2015) Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma. Journal of Applied Physics, 118 (4). 45301pp. doi:10.1063/1.4926849
Ohmi, Hiromasa, Goto, Akihiro, Kamada, Daiki, Hamaoka, Yoshinori, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2009) Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport. Applied Physics Letters, 95 (18). 181506pp. doi:10.1063/1.3261751
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma. Applied Physics Letters, 90 (15). 151904pp. doi:10.1063/1.2721366
 
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