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Lim, Phyllis S. Y., Lee, Rinus T. P., Sinha, Mantavya, Chi, Dong Zhi, Yeo, Yee-Chia (2009) Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films. Journal of Applied Physics, 106 (4). 43703pp. doi:10.1063/1.3197144

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Reference TypeJournal (article/letter/editorial)
TitleEffect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
JournalJournal of Applied Physics
AuthorsLim, Phyllis S. Y.Author
Lee, Rinus T. P.Author
Sinha, MantavyaAuthor
Chi, Dong ZhiAuthor
Yeo, Yee-ChiaAuthor
Year2009 (August 15)Volume106
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3197144Search in ResearchGate
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Mindat Ref. ID5168689Long-form Identifiermindat:1:5:5168689:7
GUID0
Full ReferenceLim, Phyllis S. Y., Lee, Rinus T. P., Sinha, Mantavya, Chi, Dong Zhi, Yeo, Yee-Chia (2009) Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films. Journal of Applied Physics, 106 (4). 43703pp. doi:10.1063/1.3197144
Plain TextLim, Phyllis S. Y., Lee, Rinus T. P., Sinha, Mantavya, Chi, Dong Zhi, Yeo, Yee-Chia (2009) Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films. Journal of Applied Physics, 106 (4). 43703pp. doi:10.1063/1.3197144
In(2009, August) Journal of Applied Physics Vol. 106 (4) AIP Publishing

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Lim, Phyllis S. Y., Zhi Chi, Dong, Chong Lim, Poh, Yeo, Yee-Chia (2012) Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment. Journal of Applied Physics, 111 (7). 73705pp. doi:10.1063/1.3700224
Sinha, Mantavya, Chor, Eng Fong, Yeo, Yee-Chia (2008) Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation. Applied Physics Letters, 92 (22). 222114pp. doi:10.1063/1.2940596
Lim, Phyllis S. Y., Chi, Dong Zhi, Zhou, Qian, Yeo, Yee-Chia (2013) NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height. Journal of Applied Physics, 113 (1). 13712pp. doi:10.1063/1.4772710
Sinha, Mantavya, Lee, Rinus T. P., Lohani, Anup, Mhaisalkar, Subodh, Chor, Eng Fong, Yeo, Yee-Chia (2009) Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation. Journal of the Electrochemical Society, 156. doi:10.1149/1.3072677
Lim, Andy Eu-Jin, Lee, Rinus T. P., Koh, Alvin T. Y., Samudra, Ganesh S., Kwong, Dim-Lee, Yeo, Yee-Chia (2008) Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction. Japanese Journal of Applied Physics, 47 (4) 2383-2387 doi:10.1143/jjap.47.2383
Lim, Phyllis S. Y., Chi, Dong Zhi, Lim, Poh Chong, Wang, Xin Cai, Chan, Taw Kuei, Osipowicz, Thomas, Yeo, Yee-Chia (2010) Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal. Applied Physics Letters, 97 (18). 182104pp. doi:10.1063/1.3514242
Sinha, Mantavya, Chor, Eng Fong, Tan, Chung Foong (2007) Schottky barrier height tuning of silicide on Si1−xCx. Applied Physics Letters, 91 (24). 242108pp. doi:10.1063/1.2820386
Shi Ya Lim, Phyllis, Zhi Chi, Dong, Cai Wang, Xin, Yeo, Yee-Chia (2012) Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal. Applied Physics Letters, 101 (17). 172103pp. doi:10.1063/1.4762003
Lim, Andy Eu-Jin, Fang, Wei-Wei, Liu, Fangyue, Lee, Rinus Tek Po, Samudra, Ganesh, Kwong, Dim-Lee, Yeo, Yee-Chia (2007) Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers. Applied Physics Letters, 91 (17). 172115pp. doi:10.1063/1.2803762
Lim, Andy Eu-Jin, Lee, Rinus Tek Po, Tung, Chih Hung, Tripathy, S., Kwong, Dim-Lee, Yeo, Yee-Chia (2006) Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications. Journal of the Electrochemical Society, 153. doi:10.1149/1.2171827
(2015) Very low Schottky barrier height at carbon nanotube and silicon carbide interface. Applied Physics Letters, 106 (12). 123501pp. doi:10.1063/1.4916248
 
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